1. WO2026174511 - MICRO-LED STRUCTURE WITH SIDEWALL STEP

Publication Number WO/2026/174511

Publication Date 27.08.2026

International Application No. PCT/CN2025/078396

International Filing Date 21.02.2025

IPC

H10H 20/819 2025.1

H	ELECTRICITY
10	SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H	INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
20	Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes
80	Constructional details
81	Bodies
819	characterised by their shape, e.g. curved or truncated substrates

H10H 29/855 2025.1

H	ELECTRICITY
10	SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H	INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
29	Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/161
80	Constructional details
85	Packages
855	Optical field-shaping means, e.g. lenses

H10H 20/819 2025.1

H	ELECTRICITY
10	SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H	INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
20	Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes
80	Constructional details
81	Bodies
819	characterised by their shape, e.g. curved or truncated substrates

H10H 29/855 2025.1

H	ELECTRICITY
10	SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H	INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
29	Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/161
80	Constructional details
85	Packages
855	Optical field-shaping means, e.g. lenses

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Applicants

• HUE INC. [CN]/[CN]

Inventors

• GU, Zhichen
• TAN, Weisin

Agents

• SHANGHAI ZHISHENG INTELLECTUAL PROPERTY OFFICE

Priority Data

Publication Language English (en)

Filing Language English (en)

Designated States

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AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CV, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IQ, IR, IS, IT, JM, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, MG, MK, MN, MU, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UY, UZ, VC, VN, WS, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, CV, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SC, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

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Title

(EN) MICRO-LED STRUCTURE WITH SIDEWALL STEP

(FR) STRUCTURE DE MICRO-DEL AVEC MARCHE SUR LE FLANC

Abstract

(EN) Described herein is a Micro-LED structure with sidewall step, including a Micro-LED mesa that emits a first color. The Micro-LED mesa is positioned on a substrate and the Micro-LED mesa has a first step at the sidewall.

(FR) L'invention concerne une structure de micro-DEL avec marche sur le flanc, comprenant une mesa à micro-DEL qui émet une première couleur. La mesa à micro-DEL est positionnée sur un substrat et la mesa à micro-DEL a une première marche au niveau du flanc.

Latest bibliographic data on file with the International Bureau

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