1. WO2026174447 - DETECTION APPARATUS FOR PLASMA SURFACE ETCHING PROCESS

Publication Number WO/2026/174447

Publication Date 27.08.2026

International Application No. PCT/CN2025/078001

International Filing Date 19.02.2025

IPC

H01L 21/66 2006.1

H	ELECTRICITY
01	ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
66	Testing or measuring during manufacture or treatment

H01L 21/67 2006.1

H	ELECTRICITY
01	ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
67	Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

H01L 21/66 2006.1

H	ELECTRICITY
01	ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
66	Testing or measuring during manufacture or treatment

H01L 21/67 2006.1

H	ELECTRICITY
01	ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H1060
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
67	Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

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Applicants

• 柯正浩 KO, Cheng-Hao [CN]/[CN]

Inventors

• 柯正浩 KO, Cheng-Hao

Agents

• 深圳诚理知识产权代理事务所（特殊普通合伙） SHENZHEN CHENGLI INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP)

Priority Data

Publication Language Chinese (zh)

Filing Language Chinese (zh)

Designated States

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AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CV, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IQ, IR, IS, IT, JM, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, MG, MK, MN, MU, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UY, UZ, VC, VN, WS, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, CV, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SC, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

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Title

(EN) DETECTION APPARATUS FOR PLASMA SURFACE ETCHING PROCESS

(FR) APPAREIL DE DÉTECTION POUR PROCESSUS DE GRAVURE DE SURFACE AU PLASMA

(ZH) 一电浆表面蚀刻工艺侦测装置

Abstract

(EN) A detection apparatus for a plasma surface etching process, the detection apparatus comprising: a detection stage, which is used for detecting the plasma surface etching process state of an object to be inspected; a detection hole, the detection hole being disposed at any position on the detection stage, and having a depth on the detection stage; and a detector, which is disposed on at least one side within the detection hole, wherein when the detection of the surface etching process state of said object is performed on the detection stage and the detection hole is aligned with the position of said object under detection, the detector disposed in the detection hole is used to detect the surface etching process state of said object.

(FR) Appareil de détection pour un processus de gravure de surface au plasma, l'appareil de détection comprenant : un plateau de détection, qui est utilisé pour détecter l'état du processus de gravure de surface au plasma d'un objet à inspecter ; un trou de détection, le trou de détection étant disposé en n'importe quelle position sur le plateau de détection, et ayant une profondeur sur le plateau de détection ; et un détecteur, qui est disposé sur au moins un côté à l'intérieur du trou de détection, la détection de l'état du processus de gravure de surface dudit objet étant effectuée sur le plateau de détection et le trou de détection étant aligné avec la position dudit objet en cours de détection, le détecteur disposé dans le trou de détection étant utilisé pour détecter l'état du processus de gravure de surface dudit objet.

(ZH) 一种电浆表面蚀刻工艺侦测装置，其包括：一侦测载台，系用以侦测待测物的电浆表面蚀刻工艺状态；一侦测孔，该侦测孔置于该侦测载台任一位置上，该侦测孔在该侦测载台具有一深度；以及一侦测器，系置于该侦测孔内的至少一侧边；其中当该侦测载台进行侦测该待测物的表面蚀刻工艺状态时，该侦测孔对准侦测的待测物位置时，系利用置于该侦测孔内的该侦测器进行侦测该待测物的表面蚀刻工艺状态。

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