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1. WO2020142307 - METHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE CURRENT

US20200211834METHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE CURRENT
Appl.Date 23.12.2019
Appl.No 16725226 Applicant Applied Materials, Inc. Pub.Kind A1
Inclusion Criteria IC4
US application related to another US application already included in the family.

The former is either a division, continuation, reissue or republication of the latter.

Pub.Date 02.07.2020
WO/2020/142307METHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE CURRENT
Appl.Date 23.12.2019
Appl.No PCT/US2019/068270 Applicant APPLIED MATERIALS, INC. Pub.Kind A Pub.Lang en
Inclusion Criteria IC1
PCT application from which the family originated.
Pub.Date 09.07.2020
SG11202107157RMETHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE CURRENT
Appl.Date 23.12.2019
Appl.No 11202107157R Applicant APPLIED MATERIALS, INC. Pub.Kind A1
Inclusion Criteria IC2
National entry of a PCT application.

If this application is not visible in the National Phase tab of the PCT application, its relationship to the PCT application is identified from the PCT or regional filing or publication information of its bibliographic data.

Pub.Date 29.07.2021
KR1020210099175낮은 누설 전류를 갖는 실리콘 붕소를 포함하는 막들을 형성하기 위한 방법들
Appl.Date 23.12.2019
Appl.No 1020217024206 Applicant 어플라이드 머티어리얼스, 인코포레이티드 Pub.Kind A
Inclusion Criteria IC2
National entry of a PCT application.

If this application is not visible in the National Phase tab of the PCT application, its relationship to the PCT application is identified from the PCT or regional filing or publication information of its bibliographic data.

Pub.Date 11.08.2021
CN113316835用于形成具有低漏电流的含硅硼膜的方法
Appl.Date 23.12.2019
Appl.No 201980089580.7 Applicant 应用材料公司 Pub.Kind A
Inclusion Criteria IC2
National entry of a PCT application.

If this application is not visible in the National Phase tab of the PCT application, its relationship to the PCT application is identified from the PCT or regional filing or publication information of its bibliographic data.

Pub.Date 27.08.2021