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1. WO2010125164 - THROUGH SUBSTRATE VIAS

Publication Number WO/2010/125164
Publication Date 04.11.2010
International Application No. PCT/EP2010/055867
International Filing Date 29.04.2010
IPC
H01L 21/768 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/48 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
CPC
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 23/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
481Internal lead connections, e.g. via connections, feedthrough structures
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2924/09701
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
095with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
097Glass-ceramics, e.g. devitrified glass
09701Low temperature co-fired ceramic [LTCC]
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • IBM UNITED KINGDOM LIMITED [GB]/[GB] (MG)
  • WEBB, Bucknell [US]/[US] (UsOnly)
  • COTTE, John, Michael [US]/[US] (UsOnly)
  • JAHNES, Christopher, Vincent [US]/[US] (UsOnly)
Inventors
  • WEBB, Bucknell
  • COTTE, John, Michael
  • JAHNES, Christopher, Vincent
Agents
  • WILLIAMS, Julian, David
Priority Data
12/432,24329.04.2009US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) THROUGH SUBSTRATE VIAS
(FR) TROUS D'INTERCONNEXION TRAVERSANT UN SUBSTRAT
Abstract
(EN) Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via (240) comprises the hole and the first metal.
(FR) L'invention concerne les procédés et un appareil pour former des trous d'interconnexion traversants, par exemple, un procédé pour former un trou d'interconnexion dans une partie d'une tranche semi-conductrice comprenant un substrat. Le procédé comprend la formation d'une tranchée entourant une première partie du substrat de telle manière que la première partie soit séparée d'une deuxième partie du substrat, la formation d'un trou à travers le substrat dans la première partie, et la formation d'un premier métal à l'intérieur du trou. La tranchée s'étend à travers le substrat. Le premier métal s'étend d'une surface frontale du substrat à une surface arrière du substrat. Le trou d'interconnexion (240) comprend le trou et le premier métal.
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