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1. WO2020137146 - SEMICONDUCTOR LASER ELEMENT

Publication Number WO/2020/137146
Publication Date 02.07.2020
International Application No. PCT/JP2019/042637
International Filing Date 30.10.2019
IPC
H01S 5/343 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
CPC
H01S 5/343
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
Applicants
  • ローム株式会社 ROHM CO., LTD. [JP]/[JP]
Inventors
  • 廣川 優樹 HIROKAWA, Yuki
  • 石田 祐士 ISHIDA, Yuji
  • 西本 宜央 NISHIMOTO, Yoshio
Agents
  • 特許業務法人あい特許事務所 AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS
Priority Data
2018-24802928.12.2018JP
2019-02682118.02.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LASER ELEMENT
(FR) ÉLÉMENT LASER À SEMI-CONDUCTEUR
(JA) 半導体レーザ素子
Abstract
(EN)
A semiconductor laser element 60 comprises a semiconductor laminate structure 50 which includes: a substrate 1; an n-type cladding layer 15 disposed on an upper surface side of the substrate 1; an active layer 10 disposed on the n-type cladding layer 15 on the opposite side to the substrate 1; and p-type cladding layers 16, 18 disposed on the active layer 10 on the opposite side to the n-type cladding layer 15. The active layer 10 includes a quantum well layer 221 having a tensile strain for generating TM mode oscillation. Each of the n-type cladding layer 15 and the p-type cladding layers 16, 18 is made of an AlGaAs layer.
(FR)
L'invention concerne un élément laser à semi-conducteur 60 comprenant une structure stratifiée semi-conductrice 50 qui comprend : un substrat 1 ; une couche de gainage de type n 15 disposée sur un côté de surface supérieure du substrat 1 ; une couche active 10 disposée sur la couche de gainage de type n 15 sur le côté opposé au substrat 1 ; et des couches de gainage de type p 16, 18 disposées sur la couche active 10 sur le côté opposé à la couche de gainage de type n 15. La couche active 10 comprend une couche de puits quantique 221 ayant une contrainte de traction pour générer une oscillation de Mode TM. Chacune de la couche de gainage de type n 15 et des couches de gainage de type p 16, 18 est constituée d'une couche d'AlGaAs.
(JA)
半導体レーザ素子60は、基板1と、基板1の表面側に配置されたn型クラッド層15と、n型クラッド層15の基板1とは反対側に配置された活性層10と、活性層10のn型クラッド層15とは反対側に配置されたp型クラッド層16,18とを有する半導体積層構造50を含む。活性層10は、TMモード発振を生じさせるための引っ張り歪みを有する量子井戸層221を含み、n型クラッド層15およびp型クラッド層16,18は、それぞれAlGaAs層からなる。
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