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1. WO2020134202 - PREPARATION METHOD FOR QUANTUM DOT LIGHT EMITTING DIODE

Publication Number WO/2020/134202
Publication Date 02.07.2020
International Application No. PCT/CN2019/106135
International Filing Date 17.09.2019
IPC
H01L 51/54 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
54Selection of materials
CPC
H01L 51/0005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
0004using printing techniques, e.g. ink-jet printing, screen printing
0005ink-jet printing
H01L 51/0029
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0029Special provisions for controlling the atmosphere during processing
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 张节 ZHANG, Jie
  • 向超宇 XIANG, Chaoyu
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811639610.029.12.2018CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PREPARATION METHOD FOR QUANTUM DOT LIGHT EMITTING DIODE
(FR) PROCÉDÉ DE PRÉPARATION D'UNE DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES
(ZH) 量子点发光二极管的制备方法
Abstract
(EN) A preparation method for a quantum dot light emitting diode, comprising the following steps: providing a substrate, placing the substrate in an inert atmosphere containing an active gas, and printing quantum dot ink on the surface of the substrate to prepare a quantum dot light emitting layer (S01). The provided preparation method for a quantum dot light emitting diode changes the film forming atmosphere of inkjet printing, and preparing a quantum dot light emitting layer in an inert atmosphere containing an active gas can improve the device efficiency of the quantum dot light emitting diode while ensuring the printability of the quantum dot ink.
(FR) L'invention concerne un procédé de préparation d'une diode électroluminescente à points quantiques, qui comprend les étapes suivantes : fournir un substrat, placer le substrat dans une atmosphère inerte contenant un gaz actif, et imprimer une encre à points quantiques sur la surface du substrat pour préparer une couche électroluminescente à points quantiques (S01). Le procédé de préparation d'une diode électroluminescente à points quantiques modifie l'atmosphère filmogène d'impression à jet d'encre, et la préparation d'une couche électroluminescente à points quantiques dans une atmosphère inerte contenant un gaz actif permet d'améliorer l'efficacité d'un dispositif à diode électroluminescente à points quantiques tout en assurant l'aptitude à l'impression de l'encre à points quantiques.
(ZH) 一种量子点发光二极管的制备方法,包括以下步骤:提供基板,将基板置于含有活性气体的惰性气氛中,在基板表面打印量子点墨水,制备量子点发光层(S01)。所提供的量子点发光二极管的制备方法,改变喷墨打印成膜氛围,在含有活性气体的惰性气氛中制备量子点发光层,可以在保证量子点墨水打印性的同时,提高量子点发光二极管的器件效率。
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