1. WO2026085645 - METHOD FOR REDUCING STRESS OF LARGE-SIZED SILICON CARBIDE CRYSTAL

Publication Number WO/2026/085645

Publication Date 30.04.2026

International Application No. PCT/CN2024/125963

International Filing Date 21.10.2024

IPC

C30B 29/36 2006.1

C	CHEMISTRY; METALLURGY
30	CRYSTAL GROWTH
B	SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29	Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10	Inorganic compounds or compositions
36	Carbides

C30B 23/00 2006.1

C	CHEMISTRY; METALLURGY
30	CRYSTAL GROWTH
B	SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23	Single-crystal growth by condensing evaporated or sublimed materials

C30B 29/36 2006.1

C	CHEMISTRY; METALLURGY
30	CRYSTAL GROWTH
B	SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29	Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10	Inorganic compounds or compositions
36	Carbides

C30B 23/00 2006.1

C	CHEMISTRY; METALLURGY
30	CRYSTAL GROWTH
B	SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23	Single-crystal growth by condensing evaporated or sublimed materials

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Applicants

• 宁波恒普技术股份有限公司 NINGBO HIPER TECHNOLOGIES CO., LTD [CN]/[CN]

Inventors

• 刘鹏 LIU, Peng
• 周荣国 ZHOU, Rongguo
• 邹路 ZOU, Lu

Agents

• 北京高沃律师事务所 BEIJING GAOWO LAW FIRM

Priority Data

Publication Language Chinese (zh)

Filing Language Chinese (zh)

Designated States

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AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CV, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IQ, IR, IS, IT, JM, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, MG, MK, MN, MU, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, CV, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SC, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

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Title

(EN) METHOD FOR REDUCING STRESS OF LARGE-SIZED SILICON CARBIDE CRYSTAL

(FR) PROCÉDÉ DE RÉDUCTION DE LA CONTRAINTE D'UN CRISTAL DE CARBURE DE SILICIUM DE GRANDE TAILLE

(ZH) 一种减少大尺寸碳化硅晶体应力的方法

Abstract

(EN) The present invention relates to the technical field of silicon carbide crystal growth. Disclosed is a method for reducing the stress of a large-sized silicon carbide crystal. The method comprises: providing in a growth device a thermal insulation mechanism for reducing the thermal distribution in a crystal; suspending a seed crystal in the growth device, wherein the thermal insulation mechanism located between the seed crystal and a raw material is provided with a channel for the transmission of a raw material vapor flow; and growing the seed crystal, wherein the seed crystal can move freely laterally during the initial growth stage. The method for reducing the stress of a large-sized silicon carbide crystal provided in the present invention can reduce the stress of the crystal during initial growth.

(FR) La présente invention se rapporte au domaine technique de la croissance de cristaux de carbure de silicium. L'invention divulgue un procédé permettant de réduire la contrainte d'un cristal de carbure de silicium de grande taille. Le procédé comprend : la fourniture, dans un dispositif de croissance, d'un mécanisme d'isolation thermique permettant de réduire la distribution thermique dans un cristal ; la suspension d'un germe dans le dispositif de croissance, le mécanisme d'isolation thermique situé entre le germe et une matière première étant pourvu d'un canal permettant la transmission d'un flux de vapeur de matière première ; et la croissance du germe, le germe pouvant se déplacer librement latéralement pendant l'étape de croissance initiale. Le procédé de réduction de la contrainte d'un cristal de carbure de silicium de grande taille selon la présente invention peut réduire la contrainte du cristal lors de la croissance initiale.

(ZH) 本发明公开了一种减少大尺寸碳化硅晶体应力的方法，涉及碳化硅晶体生长技术领域，包括：生长装置内设置降低晶体热分布的隔热机构；将籽晶悬挂于生长装置内，且位于籽晶与原料之间的所述隔热机构开设供原料蒸汽流传输的通道；籽晶生长，所述籽晶在生长初期能够横向自由移动。本发明提供的减少大尺寸碳化硅晶体应力的方法，能够减少晶体初始生长时的应力。

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