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1. WO2013006242 - ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS

US20140234550ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS
Appl.Date 05.06.2012
Appl.No 14130987 Applicant Ariyasena Thiloka Related Type IC2
National entry of a PCT application.

If this application is not visible in the National Phase tab of the PCT application, its relationship to the PCT application is identified from the PCT or regional filing or publication information of its bibliographic data.

Pub.Kind A1
Pub.Date 21.08.2014
KR1020140082640전이 금속 박막의 원자층 증착
Appl.Date 05.06.2012
Appl.No 1020147002941 Applicant 웨인 스테이트 유니버시티 Related Type IC2
National entry of a PCT application.

If this application is not visible in the National Phase tab of the PCT application, its relationship to the PCT application is identified from the PCT or regional filing or publication information of its bibliographic data.

Pub.Kind A,B1
Pub.Date 02.07.2014
WO/2013/006242ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS
Appl.Date 05.06.2012
Appl.No PCT/US2012/040892 Applicant ARIYASENA, Thiloka Related Type IC1
PCT application from which the family originated.
Pub.Kind A Pub.Lang en
Pub.Date 10.01.2013
GB2506317Atomic layer deposition of transition metal thin films
Appl.Date 05.06.2012
Appl.No 201400262 Applicant UNIV WAYNE STATE Related Type IC6
Connected by priority field.
Pub.Kind A,D0,B Pub.Lang en
Pub.Date 26.02.2014
DE1120120028716
Appl.Date 07.01.2014
Appl.No 1120120028716 Related Type IC3
National entry of a PCT application not found in PATENTSCOPE.
DE112012002871
Appl.Date 07.01.2014
Appl.No 112012002871 Related Type IC3
National entry of a PCT application not found in PATENTSCOPE.