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1. WO2020139604 - MADE-TO-STOCK PATTERNED TRANSPARENT CONDUCTIVE LAYER

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[ EN ]

WHAT IS CLAIMED IS:

1. A method of forming an electrochemical device, the method comprising:

providing a substrate and a stack overlying the substrate, the stack comprising: a first transparent conductive layer over the substrate;

a second transparent conductive layer over the substrate;

a cathodic electrochemical layer between the first transparent conductive layer and the second transparent conductive layer; and

an anodic electrochemical layer between the first transparent conductive layer and the second transparent conductive layer;

depositing an insulating layer over the stack;

determining a first pattern for the second transparent conductive layer, wherein the first pattern comprises a first region and a second region, wherein the first region and the second region comprise the same material; and

patterning the first region of the second transparent conductive layer without removing the material from the first region, wherein after patterning the first region, the first region comprises a first resistivity and the second region comprises a second resistivity.

2. The method of claim 1, wherein patterning the second transparent conductive layer to form the first resistivity and the second resistivity is patterned through the insulating layer.

3. The method of claim 1, wherein patterning the second transparent conductive layer to form the first resistivity and the second resistivity is patterned through the substrate, the first transparent conductive layer, the cathodic electrochemical layer, and the anodic

electrochemical layer.

4. The method of claim 1, wherein patterning the second transparent conductive layer comprises using a short pulse laser having a wavelength between 400nm and 700 nm.

5. The method of claim 1, wherein the short pulse laser have a wavelength between 500nm and 550nm.

6. The method of claim 1, wherein the short pulse laser fires for a duration of between 50 femtoseconds and 1 second.

7 The method of claim 1, wherein the first resistivity is greater than the second resistivity.

8. The method of claim 1, wherein the first resistivity is between 15 W/sq to 100 W/sq.

9. The method of claim 1, wherein the substrate comprises a material selected from the group consisting of glass, sapphire, aluminum oxynitride, spinel, polyacrylic compound, polyalkene, polycarbonate, polyester, polyether, polyethylene, polyimide, polysulfone,

polysulfide, polyurethane, polyvinylacetate, another suitable transparent polymer, co-polymer of the foregoing, float glass, borosilicate glass, and any combination thereof.

10. The method of claim 1, wherein the stack further comprises an ion conducting layer between the cathodic electrochemical layer and the anodic electrochemical layer.

11 The method of claim 10, wherein the ion-conducting layer comprises a material selected from the group consisting of lithium, sodium, hydrogen, deuterium, potassium, calcium, barium, strontium, magnesium, oxidized lithium, L12WO4, tungsten, nickel, lithium carbonate, lithium hydroxide, lithium peroxide, and any combination thereof.

12. The method of claim 1, wherein the cathodic electrochemical layer comprises an electrochromic material.

13 The method of claim 12, wherein the electrochromic material comprises a material selected from the group consisting of WO3, V2O5, M0O3, ^Os, T1O2, CuO, N12O3, NiO, ¾(¾, (¾(¾, C02O3, Mh2(¾, mixed oxides (e.g., W-Mo oxide, W-V oxide), lithium, aluminum, zirconium, phosphorus, nitrogen, fluorine, chlorine, bromine, iodine, astatine, boron, a borate with or without lithium, a tantalum oxide with or without lithium, a lanthanide-based material with or without lithium, another lithium-based ceramic material, or any combination thereof.

14. The method of claim 1, wherein the first transparent conductive layer comprises indium oxide, indium tin oxide, doped indium oxide, tin oxide, doped tin oxide, zinc oxide, doped zinc oxide, ruthenium oxide, doped ruthenium oxide, silver, gold, copper, aluminum, and any combination thereof.

15. The method of claim 1, wherein patterning the second transparent conductive layer to form the first resistivity and the second resistivity is patterned after forming the stack.