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1. WO2014156898 - GAS PRODUCTION APPARATUS

Publication Number WO/2014/156898
Publication Date 02.10.2014
International Application No. PCT/JP2014/057581
International Filing Date 19.03.2014
IPC
C25B 9/00 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
9Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies
C25B 11/04 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
11Electrodes; Manufacture thereof not otherwise provided for
04characterised by the material
C25B 11/08 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
11Electrodes; Manufacture thereof not otherwise provided for
04characterised by the material
06by the catalytic materials used
08Noble metals
H01L 31/04 2014.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
C25B 1/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
1Electrolytic production of inorganic compounds or non-metals
01Products
02Hydrogen or oxygen
04by electrolysis of water
C25B 1/55
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
1Electrolytic production of inorganic compounds or non-metals
50Processes
55Photoelectrolysis
C25B 11/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
11Electrodes; Manufacture thereof not otherwise provided for
04characterised by the material
C25B 9/73
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
9Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
70Assemblies comprising two or more cells
73of the filter-press type
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/02363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02363of the semiconductor body itself, e.g. textured active layers
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
  • 人工光合成化学プロセス技術研究組合 JAPAN TECHNOLOGICAL RESEARCH ASSOCIATION OF ARTIFICIAL PHOTOSYNTHETIC CHEMICAL PROCESS [JP]/[JP]
Inventors
  • 東 耕平 HIGASHI Kohei
Agents
  • 渡辺 望稔 WATANABE Mochitoshi
Priority Data
2013-06893928.03.2013JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAS PRODUCTION APPARATUS
(FR) APPAREIL DE PRODUCTION DE GAZ
(JA) ガス製造装置
Abstract
(EN) A gas production apparatus according to the present invention is equipped with: a module which is composed of multiple PN junctions each having a light-receiving surface, each composed of an inorganic semiconductor material and connected in series; two gas generation sections which are respectively provided at open ends of PN junctions located at both ends of the module on a light-receiving surface side; an electrolysis chamber in which both an aqueous electrolytic solution that is to be in contact with the two gas generation sections and a gas generated on each of gas generation surfaces are housed; and an ion-permeable and gas-impermeable partitioning membrane by which the electrolytic chamber is partitioned into two zones, wherein one of the zones contains one of the gas generation sections and one of hydrogen and oxygen and the other of the zones contains the other of the gas generation sections and the other of hydrogen and oxygen.
(FR) Un appareil de production de gaz selon la présente invention est équipé de : un module qui est composé de multiples jonctions PN ayant chacune une surface recevant de la lumière, chacune composée d'une matière semi-conductrice inorganique et connectée en série ; deux sections de production de gaz qui sont respectivement agencées à des extrémités ouvertes des jonctions PN situées aux deux extrémités du module sur un côté de surface recevant de la lumière ; une chambre d'électrolyse dans laquelle à la fois une solution électrolytique aqueuse qui doit être en contact avec les deux sections de production de gaz et un gaz généré sur chacune des surfaces de production de gaz sont logés ; et une membrane de séparation perméable aux ions et imperméables aux gaz par laquelle la chambre électrolytique est séparée en deux zones, l'une des zones contenant l'une des sections de production de gaz et l'un parmi l'hydrogène et l'oxygène et l'autre des zones contenant l'autre des sections de production de gaz et l'autre parmi l'hydrogène et l'oxygène.
(JA)  本ガス製造装置は、それぞれ受光面を有し、無機半導体から構成され、直列接続される複数のPN接合からなるモジュールと、受光面の側でモジュールの両端のPN接合の開放端にそれぞれ設けられる2つガス生成部と、2つのガス生成部と接触する電解水溶液、及び各ガス生成面で生成されるガスを収容する電解室と、電解室を、それぞれ1つのガス生成部を含み、水素及び酸素の一方を収容する2つの領域に仕切るイオン透過性、ガス非透過性の隔膜とを有する。
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