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1. WO2022094666 - TOPOLOGICAL QUANTUM FIELD EFFECT TRANSISTOR

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Publication Number WO/2022/094666
Publication Date 12.05.2022
International Application No. PCT/AU2021/051306
International Filing Date 05.11.2021
IPC
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 29/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
15Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/772 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
H01L 27/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Applicants
  • MONASH UNIVERSITY [AU]/[AU]
  • NEWSOUTH INNOVATIONS PTY LIMITED [AU]/[AU]
  • UNIVERSITY OF WOLLONGONG [AU]/[AU]
Inventors
  • CULCER, Dimitrie
  • FUHRER, Michael
  • NADEEM, Muhammad
Agents
  • SPRUSON & FERGUSON
Priority Data
202090405206.11.2020AU
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) TOPOLOGICAL QUANTUM FIELD EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP À QUANTUM TOPOLOGIQUE
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Abstract
(EN) Disclosed herein is a structure comprising: a gate electrode, a dielectric layer, and a planar layer of a topological material being separated from the gate electrode by at least the dielectric layer, and having a contact interface with the dielectric layer to generate an electric field-controlled Rashba spin-orbit interaction on application of an electric field thereto, wherein the topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on application of the electric field, wherein the gate electrode is configured to apply the electric field across the planar layer in a direction perpendicular to a plane of the planar layer; and wherein the topological material exhibits a change in bandgap, in the presence of the electric field, having a spin-dependent contribution represented by a proportionality constant αR and a non-spin-dependent contribution represented by a proportionality constant αv; and wherein αR > αv/3.
(FR) Est divulguée ici, une structure comprenant : une électrode de grille, une couche diélectrique et une couche plane d'un matériau topologique qui est séparée de l'électrode de grille par au moins la couche diélectrique, et présentant une interface de contact avec la couche diélectrique pour générer une interaction spin-orbite Rashba commandée par champ électrique lors de l'application d'un champ électrique à cette dernière, le matériau topologique présentant une transition de phase topologique entre un état trivial et un état non trivial à une intensité de champ électrique critique lors de l'application du champ électrique, l'électrode de grille étant configurée pour appliquer le champ électrique à travers la couche plane dans une direction perpendiculaire à un plan de la couche plane ; et le matériau topologique présentant un changement de bande interdite, en présence du champ électrique, présentant une contribution dépendant du spin représentée par une constante de proportionnalité αR et une contribution non dépendante du spin représentée par une constante de proportionnalité αv ; et αR > αv/3.
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