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1. KR1020210084633 - 반도체 웨이퍼의 평가 방법 및 제조 방법 그리고 반도체 웨이퍼의 제조 공정 관리 방법

Office
Republic of Korea
Application Number 1020217018302
Application Date 11.11.2019
Publication Number 1020210084633
Publication Date 07.07.2021
Publication Kind A
IPC
H01L 21/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
G01N 21/94
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
94Investigating contamination, e.g. dust
G01N 21/95
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
G01N 21/956
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
956Inspecting patterns on the surface of objects
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
G01N 21/94
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
94Investigating contamination, e.g. dust
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
G01N 21/956
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
956Inspecting patterns on the surface of objects
H01L 21/02024
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02002Preparing wafers
02005Preparing bulk and homogeneous wafers
02008Multistep processes
0201Specific process step
02024Mirror polishing
H01L 21/02052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02043Cleaning before device manufacture, i.e. Begin-Of-Line process
02052Wet cleaning only
Applicants 가부시키가이샤 사무코
Inventors 나가사와 타카히로
무라카미 마사히로
Agents 이철
Priority Data 2018245448 27.12.2018 JP
Title
(KO) 반도체 웨이퍼의 평가 방법 및 제조 방법 그리고 반도체 웨이퍼의 제조 공정 관리 방법
Abstract
(KO)
연마면을 갖는 반도체 웨이퍼의 평가 방법으로서, 상기 반도체 웨이퍼를 1종 이상의 세정액에 의해 세정하는 세정 공정을 포함하고, 상기 세정 공정의 전과 후에 각각 레이저 표면 검사 장치를 이용하여 상기 연마면의 LPD를 측정하고, 상기 측정에 의해 얻어진 측정 결과에 기초하여 표 A에 나타내는 판별 기준에 의해, LPD로서 측정된 결함 또는 이물의 종류를 판별하는 것을 포함하는 반도체 웨이퍼의 평가 방법이 제공된다. JPEG pct00004.jpg 85 237