Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Tuesday 26.10.2021 at 12:00 PM CEST
Settings

Settings

Goto Application

1. JP2020106399 - METHOD FOR EVALUATING SEMICONDUCTOR WAFER, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANAGING STEPS FOR MANUFACTURING THE SAME

Office
Japan
Application Number 2018245448
Application Date 27.12.2018
Publication Number 2020106399
Publication Date 09.07.2020
Publication Kind A
IPC
G01N 21/956
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
956Inspecting patterns on the surface of objects
H01L 21/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G01N 21/956
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
956Inspecting patterns on the surface of objects
Applicants SUMCO CORP
株式会社SUMCO
Inventors NAGASAWA TAKAHIRO
長澤 崇裕
MURAKAMI MASAHIRO
村上 雅大
Agents 特許業務法人特許事務所サイクス
Title
(EN) METHOD FOR EVALUATING SEMICONDUCTOR WAFER, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANAGING STEPS FOR MANUFACTURING THE SAME
(JA) 半導体ウェーハの評価方法および製造方法ならびに半導体ウェーハの製造工程管理方法
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide a novel method for evaluation which can determine the type of defects or foreign substances in the polished surface of the polished wafer.

SOLUTION: The method for evaluating a semiconductor wafer with a polished surface includes: a cleaning step of cleaning the semiconductor wafer with at least one type of cleaning solution; measuring the LPD of the polished surface by using a laser surface inspection device before and after the cleaning step; and determining the type of defects or foreign substances measured as the LPD on the basis of the result of measurement obtained by the measurement.

SELECTED DRAWING: None

COPYRIGHT: (C)2020,JPO&INPIT

(JA)

【課題】ポリッシュドウェーハの研磨面に存在する欠陥・異物の種類を判別可能な新たな評価方法を提供する。
【解決手段】研磨面を有する半導体ウェーハの評価方法であって、上記半導体ウェーハを一種以上の洗浄液により洗浄する洗浄工程を含み、上記洗浄工程の前と後にそれぞれレーザー表面検査装置を用いて上記研磨面のLPDを測定し、上記測定により得られた測定結果に基づき、LPDとして測定された欠陥または異物の種類を判別する。
【選択図】なし