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1. WO2013006314 - METAL-OXIDE FILMS FROM SMALL MOLECULES FOR LITHOGRAPHIC APPLICATIONS

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[ EN ]

We Claim:

1. A hardmask composition comprising a metal-oxide precursor compound dispersed or dissolved in a solvent system, said precursor compound being selected from the group consisting of polymers, oligomers, monomers, and mixtures thereof, wherein: said polymers and oligomers comprise recurring monomeric units of:

; and


said monomers have the formula:

,


where:

m is at least 1;

each n is individually 1-3;

a is the number of atoms making up all oxide linkages;

x denotes the monomeric repeat unit;

M is a metal or metalloid other than silicon;

each R1 and R2 is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, phenoxys, and acetoxys; and each R3 is individually selected from the group consisting of alkyls and carbonyls,

said composition being substantially free of silicon.

2. The composition of claim 1, wherein each M is individually selected from the group consisting of aluminum, titanium, zirconium, vanadium, germanium, aluminum, hafnium, gallium, thallium, antimony, lead, bismuth, indium, tin, boron, germanium, arsenic, tellurium, and rare earth metals.

3. The composition of claim 1, said composition being substantially free of crosslinking agents.

4. The composition of claim 1, said composition being substantially free of added chromophores or light attenuating moieties.

5. The composition of claim 1, wherein said precursor compound is a polymer or oligomer, said precursor compound being present in the composition at a level of from about 0. 1% to about 5% by weight, based upon the total weight of the composition taken as

100% by weight.

6. The composition of claim 1, wherein said precursor compound is a monomer, said precursor compound being present in the composition at a level of from about 0.3% to about 5% by weight, based upon the total weight of the composition taken as 100% by weight.

7. A hardmask composition comprising a metal-oxide precursor compound dispersed or dissolved in a solvent system, said precursor compound being selected from the group consisting of polymers, oligomers, monomers, and mixtures thereof, wherein: said polymers and oligomers comprise recurring monomeric units of:

; and


said monomers have the formula:

,


where:

each m is at least 2;

each n is individually 1-3;

a is the number of atoms making up all oxide linkages;

x denotes the monomeric repeat unit;

M is a metal or metalloid other than silicon;

each R1 and R2 is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, phenoxys, and acetoxys; and each R3 is individually selected from the group consisting of alkyls and carboyls,

said composition further comprising silicon, and being insoluble in aqueous alkaline developers.

8. The composition of claim 7, wherein each M is individually selected from the group consisting of aluminum, titanium, zirconium, vanadium, germanium, aluminum, hafnium, gallium, thallium, antimony, lead, bismuth, indium, tin, boron, germanium, arsenic, tellurium, and rare earth metals.

9. The composition of claim 7, wherein said precursor compound is a polymer or oligomer, said precursor compound being present in the composition at a level of from about 0.3% to about 5% by weight, based upon the total weight of the composition taken as

100% by weight.

10. The composition of claim 7, wherein said precursor compound is a monomer, said precursor compound being present in the composition at a level of from about 0.3% to about 5% by weight, based upon the total weight of the composition taken as 100% by weight.

1 1. The composition of claim 7, wherein said composition comprises from about 0.025% to about 10% by weight silicon, based upon the total weight of the composition taken as 100% by weight.

12. The composition of claim 7, wherein said silicon is present as silicon-containing monomeric repeat units having the formula:

,


where:

y denotes the monomeric repeat unit;

z is 1-2; and

each R4 is individually selected from the group consisting of phenyls, alkyls, hydrogen, alkenyls, and alkynyls.

13. The composition of claim 12, wherein said precursor compound is a polymer or oligomer of formula (I), said silicon-containing monomeric repeat units being present as co-monomers in said polymer or oligomer.

14. The composition of claim 13, wherein the ratio of x:y in said precursor compound is from about 10: 1 to about 1: 10.

15. The composition of claim 12, wherein said precursor compound is a monomer, said silicon-containing monomeric repeat units being present as silicon polymers dispersed or dissolved in said solvent system with said precursor compound.

16. The composition of claim 7, wherein said silicon is present as silicon-containing monomers dispersed or dissolved in said solvent system with said precursor compound, said silicon-containing monomers being selected from the group consisting of:

Si(OR3)n(R4)m, Si(Cl)n(R4)m, and combinations thereof,

where:

each m is individually 0-2;

each n is individually 2-4;

each R3 is individually selected from the group consisting of alkyls, phenyls, siloxyls; and

each R4 is individually selected from the group consisting of phenyls, alkyls, hydrogen, alkenyls, alkynyls, naphthyls, silyls, and pyridyls.

17. The composition of claim 16, wherein said composition comprises from about 0.025% to about 10% by weight silicon, based upon the total weight of the composition taken as 100% by weight.

18. The composition of claim 7, said composition being substantially free of crosslinking agents.

19. The composition of claim 7, said composition being substantially free of added chromophores or light attenuating moieties.

20. A method of forming a microelectronic structure, said method comprising: providing a substrate having a surface;

optionally forming one or more intermediate layers on said surface;

applying a hardmask composition adjacent said intermediate layers, if present, or adjacent said substrate surface if no intermediate layers are present to form a stack, said hardmask composition comprising a metal-oxide precursor compound dissolved or dispersed in a solvent system, said precursor compound being selected from the group consisting of polymers, oligomers, monomers, and mixtures thereof, wherein said composition is substantially free of silicon; and

heating said hardmask composition to at least about 205 °C to yield a cured hardmask layer comprising a metal oxide film, wherein said cured hardmask layer is insoluble in aqueous alkaline developers.

2 1. The method of claim 20, further comprising applying an imaging layer adjacent to said cured hardmask layer.

22. The method of claim 2 1, furthering comprising:

exposing at least a portion of said imaging layer to activating radiation to yield exposed portions of said imaging layer; and

contacting said exposed portions with a developer so as to remove said exposed portions and yield a patterned imaging layer.

23. The method of claim 22, wherein said cured hardmask layer adjacent said exposed portions is not removed during said contacting.

24. The method of claim 22, further comprising transferring said pattern into said hardmask layer via etching.

25. The method of claim 20, wherein said intermediate layers are selected from the group consisting of spin-on carbon layers, amorphous carbon layers, bottom anti-reflective coatings, planarization layers, and combinations of the foregoing.

26. The method of claim 25, wherein said stack comprises a spin-on carbon intermediate layer, said stack being free of any anti-reflective layers.

27. The method of claim 20, wherein said metal-oxide precursor compound is selected from the group consisting of:

polymers and oligomers comprising recurring monomeric units of:

; and


metal and metalloid monomers having the formula:

,


where:

m is at least 1 ;

each n is individually 1-3;

a is the number of atoms making up all oxide linkages;

x denotes the monomeric repeat unit;

M is a metal or metalloid other than silicon;

each R1 and R2 is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, phenoxys, and acetoxys; and each R3 is individually selected from the group consisting of alkyls, phenyls, and carbonyls.

28. The method of claim 27, wherein said metal-oxide precursor compound is a metal or metalloid monomer of formula (II), and wherein said heating comprises polymerizing said monomers to yield said metal oxide film.

29. A method of forming a microelectronic structure, said method comprising: providing a substrate having a surface;

optionally forming one or more intermediate layers on said surface;

applying a hardmask composition adjacent said intermediate layers, if present, or adjacent said substrate surface if no intermediate layers are present to form a stack, said hardmask composition comprising a metal-oxide precursor compound dissolved or dispersed in a solvent system, wherein said precursor compound is selected from the group consisting of polymers, oligomers, monomers, and mixtures thereof, wherein:

said polymers and oligomers comprise recurring monomeric units of:

; and


said monomers have the formula:

,


where:

each m is at least 2;

each n individually is 1-3;

a is the number of atoms making up all oxide linkages;

x denotes the monomeric repeat unit;

M is a metal or metalloid other than silicon;

each R1 and R2 is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, phenoxys, and acetoxys; and each R3 is individually selected from the group consisting of alkyls, and cabonyls, said composition further comprising silicon;

heating said hardmask composition to yield a cured hardmask layer comprising a metal oxide film, wherein said cured hardmask layer is insoluble in aqueous alkaline developers.

30. The method of claim 29, wherein said silicon is present as silicon-containing monomeric repeat units having the formula:

,

where:

y denotes the monomeric repeat unit;

z is 1-2; and

each R4 is individually selected from the group consisting of phenyls, alkyls, hydrogen, alkenyls, and alkynyls.

3 1. The method of claim 30, wherein said precursor compound is a polymer or oligomer of formula ( 1), said silicon-containing monomeric repeat units being present as co-monomers in said polymer or oligomer.

32. The method of claim 30, wherein said precursor compound is a monomer, said silicon-containing monomeric repeat units being present as silicon polymers dispersed or dissolved in said solvent system with said precursor compound.

33. The method of claim 29, wherein said silicon is present as silicon-containing monomers dispersed or dissolved in said solvent system with said precursor compound, said silicon-containing monomers being selected from the group consisting of:

Si(OR3)n(R4)m, Si(Cl)n(R4)m, and combinations thereof,

where:

each m is individually 0-2;

each n is individually 2-4;

each R3 is individually selected from the group consisting of alkyls, phenyls and siloxyls; and

each R4 is individually selected from the group consisting of phenyls, alkyls, hydrogen, naphthyls, silyls, and pyridyls.

34. A microelectronics structure comprising:

a substrate having a surface;

one or more optional intermediate layers adjacent said substrate surface; and a cured hardmask layer adjacent said intermediate layers if present, or adjacent said substrate surface when no intermediate layers are present, said cured hardmask layer being insoluble in aqueous alkaline developers, and being formed from a hardmask composition comprising a metal-oxide precursor compound dispersed or dissolved in a solvent system, said precursor compound being selected from the group consisting of polymers, oligomers, monomers, and mixtures thereof, wherein:

said polymers and oligomers comprise recurring monomeric units of:

; and


said monomers have the formula:

,


where:

m is at least 1;

each n is individually 1-3;

a is the number of atoms making up all oxide linkages;

x denotes the monomeric repeat unit;

M is a metal or metalloid other than silicon;

each R1 and R2 is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, phenoxys, and acetoxys; and each R3 is individually selected from the group consisting of alkyls, phenyls, and carbonyls, said composition being substantially free of silicon.

35. The structure of claim 34, wherein said intermediate layers are selected from the group consisting of spin-on carbon layers, amorphous carbon layers, bottom anti-reflective coatings, planarization layers, and combinations of the foregoing.

36. The structure of claim 35, wherein said structure comprises a spin-on carbon intermediate layer, said structure being free of any anti-reflective layers.

37. A microelectronics structure comprising:

a substrate having a surface;

one or more optional intermediate layers adjacent said substrate surface; and a cured hardmask layer adjacent said intermediate layers if present, or adjacent said substrate surface when no intermediate layers are present, said cured hardmask layer being insoluble in aqueous alkaline developers, and being formed from a hardmask composition comprising a metal-oxide precursor compound dispersed or dissolved in a solvent system, wherein said precursor compound is selected from the group consisting of polymers, oligomers, monomers, and mixtures thereof, wherein:

said polymers and oligomers comprise recurring monomeric units of:

; and


said monomers have the formula:

,


where

each m is at least 2;

each n is individually 1-3;

a is the number of atoms making up all oxide linkages;

x denotes the monomeric repeat unit;

M is a metal or metalloid other than silicon;

each R1 and R2 is individually selected from the group consisting of hydrogen, alkyls, aryls,

alkoxys, phenoxys, and acetoxys; and each R3 is individually selected from the group consisting of alkyls and carbonyls, said composition further comprising silicon.