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1. WO2021204639 - SYSTEMS AND METHODS FOR SIGNAL ELECTRON DETECTION

Publication Number WO/2021/204639
Publication Date 14.10.2021
International Application No. PCT/EP2021/058551
International Filing Date 01.04.2021
IPC
H01L 31/115 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
H01L 31/105 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
105the potential barrier being of the PIN type
H01J 49/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
49Particle spectrometers or separator tubes
H01J 43/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
43Secondary-emission tubes; Electron-multiplier tubes
02Tubes in which one or a few electrodes are secondary-electron-emitting electrodes
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • REN, Weiming
  • CHEN, Zhong-wei
  • WANG, Yongxin
Agents
  • ASML NETHERLANDS B.V.
Priority Data
63/008,63910.04.2020US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEMS AND METHODS FOR SIGNAL ELECTRON DETECTION
(FR) SYSTÈMES ET PROCÉDÉS DE DÉTECTION D'ÉLECTRONS DE SIGNAL
Abstract
(EN)
Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.
(FR)
Certains modes de réalisation divulgués comprennent un détecteur d'électrons comprenant : une première couche semi-conductrice ayant une première partie et une seconde partie ; une deuxième couche semi-conductrice ; une troisième couche semi-conductrice ; une région PIN formée par les première, deuxième et troisième couches semi-conductrices ; une alimentation électrique configurée pour appliquer une polarisation inverse entre les première et troisième couches semi-conductrices ; et une région d'appauvrissement formée à l'intérieur de la région PIN par la polarisation inverse et configurée pour générer un signal de détecteur sur la base d'un premier sous-ensemble de la pluralité d'électrons de signal capturés à l'intérieur de la région d'appauvrissement, la deuxième partie de la première couche semi-conductrice n'étant pas appauvrie et étant configurée pour servir de barrière d'énergie pour bloquer un deuxième sous-ensemble de la pluralité d'électrons de signal et pour permettre la traversée du premier sous-ensemble de la pluralité d'électrons de signal pour atteindre la région d'appauvrissement.
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