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1. WO2021204051 - HEATING APPARATUS IN SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Publication Number WO/2021/204051
Publication Date 14.10.2021
International Application No. PCT/CN2021/084863
International Filing Date 01.04.2021
IPC
H05B 3/28 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
22non-flexible
28heating conductor embedded in insulating material
H05B 3/18 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
18the conductor being embedded in an insulating material
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 14/54 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
Applicants
  • 北京北方华创微电子装备有限公司 BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. [CN]/[CN]
Inventors
  • 李冰 LI, Bing
Agents
  • 北京天昊联合知识产权代理有限公司 TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
202010281032.910.04.2020CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) HEATING APPARATUS IN SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
(FR) APPAREIL DE CHAUFFAGE DANS DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF À SEMI-CONDUCTEUR
(ZH) 半导体设备中的加热装置及半导体设备
Abstract
(EN)
Disclosed are a heating apparatus in a semiconductor device and a semiconductor device, the apparatus comprising: a heating body, which is used for carrying a chip, a heating member used for generating heat being disposed in the heating body; and a cooling structure, which is disposed below the heating body and is provided to selectively perform heat exchange with the heating body at locations at different distances from the heating body. The heating apparatus in a semiconductor device and the semiconductor device disclosed by the present invention are used for expanding the usage temperature range of the heating apparatus so as to meet different temperature requirements.
(FR)
L'invention concerne un appareil de chauffage dans un dispositif à semi-conducteur et un dispositif à semi-conducteur, l'appareil comprenant : un corps de chauffage qui est utilisé pour porter une puce, un élément de chauffage utilisé pour générer de la chaleur étant agencé dans le corps de chauffage ; et une structure de refroidissement agencée au-dessous du corps de chauffage et conçue pour effectuer sélectivement un échange de chaleur avec le corps de chauffage à des emplacements à des distances différentes du corps de chauffage. L'appareil de chauffage dans un dispositif à semi-conducteur et le dispositif à semi-conducteur décrits par la présente invention sont utilisés pour étendre la plage de température d'utilisation de l'appareil de chauffage de façon à satisfaire à différentes exigences de température.
(ZH)
本发明公开了一种半导体设备中的加热装置及半导体设备,包括:加热本体,用于承载晶片,且在加热本体中设置有用于产生热量的加热部件;以及,冷却结构,设置于加热本体的下方,且冷却结构被设置为选择性地在距离加热本体不同的位置处与加热本体产生热交换。本发明公开的半导体设备中的加热装置及半导体设备,用于扩大加热装置的使用温度范围,满足不同的温度需求。
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