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1. WO2021204047 - SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR PREPARING SAME

Publication Number WO/2021/204047
Publication Date 14.10.2021
International Application No. PCT/CN2021/084439
International Filing Date 31.03.2021
IPC
H01L 23/64 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
H01L 27/108 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
H01L 21/8242 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
Applicants
  • 长鑫存储技术有限公司 CHANGXIN MEMORY TECHNOLOGIES, INC. [CN]/[CN]
Inventors
  • 权俊模 KWON, Joon Mo
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
202010267452.108.04.2020CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR PREPARING SAME
(FR) DISPOSITIF DE STOCKAGE À SEMICONDUCTEUR ET PROCÉDÉ POUR LE PRÉPARER
(ZH) 半导体存储器件及其制备方法
Abstract
(EN)
Provided is a method for preparing a semiconductor storage device. The method comprises: providing a substrate; forming a laminated structure on the substrate; forming a plurality of capacitor holes, which are arranged at intervals, in the laminated structure; forming lower electrode layers in the capacitor holes; removing a top dielectric layer; forming a first capacitor dielectric layer on the surface of an exposed sacrificial layer and the upper surfaces of the lower electrode layers; forming a first upper electrode layer on the surface of the first capacitor dielectric layer; forming a plurality of openings in the first upper electrode layer and the first capacitor dielectric layer; removing the sacrificial layer on the basis of the openings; at least forming a second capacitor dielectric layer on the surfaces of the lower electrode layers and the surface of an exposed bottom dielectric layer; and forming a second upper electrode layer on the surface of the second capacitor dielectric layer.
(FR)
L'invention concerne un procédé de préparation d'un dispositif de stockage à semiconducteur. Le procédé comprend les étapes consistant à : fournir un substrat ; former une structure stratifiée sur le substrat ; former une pluralité de trous de condensateur, qui sont disposés à des intervalles, dans la structure stratifiée ; former des couches d'électrode inférieure dans les trous de condensateur ; retirer une couche diélectrique supérieure ; former une première couche diélectrique de condensateur sur la surface d'une couche sacrificielle exposée et les surfaces supérieures des couches d'électrode inférieure ; former une première couche d'électrode supérieure sur la surface de la première couche diélectrique de condensateur ; former une pluralité d'ouvertures dans la première couche d'électrode supérieure et la première couche diélectrique de condensateur ; retirer la couche sacrificielle sur la base des ouvertures ; former au moins une seconde couche diélectrique de condensateur sur les surfaces des couches d'électrode inférieure et la surface d'une couche diélectrique inférieure exposée ; et former une seconde couche d'électrode supérieure sur la surface de la seconde couche diélectrique de condensateur.
(ZH)
一种半导体存储器件的制备方法包括:提供衬底;于衬底上形成叠层结构;于叠层结构内形成多个间隔排布电容孔;于电容孔内形成下电极层;去除顶层介质层;于暴露出的牺牲层的表面及下电极层的上部表面形成第一电容介质层;于第一电容介质层的表面形成第一上电极层;于第一上电极层及第一电容介质层内形成多个开口;基于开口去除牺牲层;至少于下电极层的表面及暴露出的底层介质层的表面形成第二电容介质层;于第二电容介质层的表面形成第二上电极层。
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