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1. WO2021127470 - AREA SELECTIVE DEPOSITION OF METAL CONTAINING FILMS

Publication Number WO/2021/127470
Publication Date 24.06.2021
International Application No. PCT/US2020/066058
International Filing Date 18.12.2020
IPC
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/316 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
C01F 7/304
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
7Compounds of aluminium
02Aluminium oxide; Aluminium hydroxide; Aluminates
30Preparation of aluminium oxide or hydroxide by thermal decomposition ; or by hydrolysis or oxidation; of aluminium compounds
302Hydrolysis or oxidation of gaseous aluminium compounds in the gas phase
304of organic aluminium compounds
C07F 5/069
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
5Compounds containing elements of Groups 3 or 13 of the Periodic System
06Aluminium compounds
069without C-aluminium linkages
C09D 1/00
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
1Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
C23C 16/0272
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
02Pretreatment of the material to be coated
0272Deposition of sub-layers, e.g. to promote the adhesion of the main coating
C23C 16/04
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
04Coating on selected surface areas, e.g. using masks
C23C 16/403
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
403of aluminium, magnesium or beryllium
Applicants
  • L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR]/[FR]
  • AMERICAN AIR LIQUIDE, INC. [US]/[US] (KP)
Inventors
  • GIRARD, Jean-Marc
  • NOH, Wontae
  • LEE, Jooho
Priority Data
16/723,77120.12.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) AREA SELECTIVE DEPOSITION OF METAL CONTAINING FILMS
(FR) DÉPÔT SÉLECTIF EN SURFACE DE FILMS CONTENANT DU MÉTAL
Abstract
(EN)
Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula: LxM(-N(R)-(CR'2)n-NR"2) wherein M is a Group12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, ketoimine, halide, or the like; R, R''each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or tria!ky!si!y! group; R' is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkyisilyl group; n =1 - 4, wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.
(FR)
L'invention concerne des procédés de dépôt sélectif d'un film contenant du métal consistant à : fournir une surface ayant une pluralité de matériaux exposés sur celle-ci simultanément, et exposer la surface à une vapeur d'une composition de formation de film contenant du métal qui contient un précurseur ayant la formule : LxM(-N(R)-(CR'2)n-NR"2), M étant un élément du groupe 12, groupe 13, groupe 14, groupe 15, groupe IV ou groupe V ; x +1 est l'état d'oxydation du M ; L est un ligand anionique, indépendamment choisi parmi la dialkylamine, l'alcoxy, l'alkylimine, la bis (trialkylsilylamine), l'amidinate, le betadicetonate, la cétoimine, l'halogénure ou similaire ; R, R'''représentent chacun indépendamment un groupe C1-C10 trialkylsilyle, alkyle, alcényle linéaire, ramifié ou cyclique ; R' est H ou un groupe C1-C10 ; n =1 - 4, au moins l'un des matériaux étant au moins partiellement bloqué par un agent de blocage à partir du dépôt du film contenant du métal par un procédé de dépôt en phase vapeur.
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