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1. WO2022007611 - SEMICONDUCTOR STRUCTURE

Publication Number WO/2022/007611
Publication Date 13.01.2022
International Application No. PCT/CN2021/100748
International Filing Date 17.06.2021
IPC
H01L 21/768 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/48 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/538 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
538the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Applicants
  • 长鑫存储技术有限公司 CHANGXIN MEMORY TECHNOLOGIES, INC. [CN]/[CN]
Inventors
  • 吴秉桓 WU, Ping-heng
  • 张志伟 CHANG, Chih-wei
  • 王海林 WANG, Hailin
Agents
  • 上海晨皓知识产权代理事务所(普通合伙) SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP
Priority Data
202010641966.906.07.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURE
(FR) STRUCTURE SEMI-CONDUCTRICE
(ZH) 半导体结构
Abstract
(EN) The embodiments of the present application provide a semiconductor structure, comprising: a substrate (20) and a dielectric layer (21) located on the substrate (20); a conductive plug (22), a first portion of the conductive plug (22) being located in the substrate (20), and a second portion of the conductive plug (22) being located in the dielectric layer (21); and an isolation ring structure (23), the isolation ring structure (23) at least surrounding the second portion of the conductive plug (22).
(FR) Les modes de réalisation de la présente invention concernent une structure semi-conductrice, comprenant : un substrat (20) et une couche diélectrique (21) située sur le substrat (20); une fiche conductrice (22), une première partie de la fiche conductrice (22) étant située dans le substrat (20), et une seconde partie de la fiche conductrice (22) étant située dans la couche diélectrique (21); et une structure d'anneau d'isolation (23), la structure d'anneau d'isolation (23) entourant au moins la seconde partie de la fiche conductrice (22).
(ZH) 本申请实施例提供一种半导体结构,包括:基底(20)和位于基底(20)上的介质层(21);导电插塞(22),导电插塞(22)的第一部分位于基底(20)内,导电插塞(22)的第二部分位于介质层(21)内;隔离环结构(23),隔离环结构(23)至少环绕导电插塞(22)的第二部分。
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