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1. WO2022006927 - CVD REACTION MODULE OF SILICON CARBIDE EPITAXY APPARATUS

Publication Number WO/2022/006927
Publication Date 13.01.2022
International Application No. PCT/CN2020/101899
International Filing Date 14.07.2020
IPC
C30B 29/36 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C30B 25/10 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
C30B 25/12 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
12Substrate holders or susceptors
C30B 25/14 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
14Feed and outlet means for the gases; Modifying the flow of the reactive gases
C23C 16/32 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
32Carbides
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
Applicants
  • 深圳市纳设智能装备有限公司 SHENZHEN NASO TECH CO., LTD [CN]/[CN]
Inventors
  • 刘子优 LIU, Ziyou
  • 肖蕴章 XIAO, Yunzhang
  • 钟国仿 ZHONG, Guofang
  • 陈炳安 CHEN, Bingan
  • 张灿 ZHANG, Can
Agents
  • 北京酷爱智慧知识产权代理有限公司 BEIJING KUAIZHIHUI IP AGENCY CO., LTD
Priority Data
202010645173.407.07.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) CVD REACTION MODULE OF SILICON CARBIDE EPITAXY APPARATUS
(FR) MODULE DE RÉACTION DE DÉPÔT CHIMIQUE EN PHASE VAPEUR D'APPAREIL D'ÉPITAXIE DE CARBURE DE SILICIUM
(ZH) 一种碳化硅外延设备的CVD反应模块
Abstract
(EN) A CVD reaction module of a silicon carbide epitaxy apparatus, comprising a quartz housing (100), a gas inlet flange (120), and a tail end flange (130). A heating layer (300) and a thermally-insulating layer (200) are provided within the quartz housing (100). The heating layer (300) is provided with multiple replaceable elements. The replaceable elements are different in the arc of the inner top surface. A tray (500) used for placing a wafer is provided in an operation chamber. A lining (310/320) is provided in the heating layer (300) at the periphery corresponding to the tray (500). A top plate (600) used for supporting the tray (500) is provided below the tray (500). A lifting/lowering rod (810) extends outward from the bottom of the top plate (600). The beneficial effects are: when the thickness of the lining (310/320) is increased to an extent that prevents the tray (500) from performing normally a CVD process, the position of the tray (500) is slightly raised to ensure that the CVD process can continue, and to ultimately achieve the goal of extending the service life of the lining (310/320), and by replacing the heating layer (300) with one having a differently arced top surface, the temperature field of the operation chamber can be adjusted, thus increasing the uniformity of the temperature in the operation chamber, and increasing the uniformity of the thickness of a film formed on the wafer.
(FR) L'invention concerne un module de réaction de dépôt chimique en phase vapeur (CVD) d'un appareil d'épitaxie de carbure de silicium, comprenant un boîtier en quartz (100), une bride d'entrée de gaz (120) et une bride d'extrémité de sortie (130). Une couche chauffante (300) et une couche d'isolation thermique (200) sont disposées à l’intérieur du boîtier en quartz (100). La couche chauffante (300) est pourvue de multiples éléments remplaçables. Les éléments remplaçables sont différents dans l'arc de la surface supérieure interne. Un plateau (500) utilisé pour placer une tranche est disposé dans une chambre de mise en œuvre. Un chemisage (310/320) est disposé dans la couche chauffante (300) à la périphérie correspondant au plateau (500). Une plaque supérieure (600) utilisée pour supporter le plateau (500) est disposée sous le plateau (500). Une tige de levage/abaissement (810) s'étend vers l'extérieur à partir du fond de la plaque supérieure (600). Les effets avantageux sont les suivants : lorsque l'épaisseur du chemisage (310/320) augmente au point d'empêcher le plateau (500) d'effectuer un processus de CVD normalement, la position du plateau (500) est légèrement relevée pour garantir que le processus de CVD peut se poursuivre et pour atteindre en fin de compte le but d'allonger la durée de vie du chemisage (310/320) et par le remplacement de la couche chauffante (300) par une couche chauffante ayant une surface supérieure en arc différent, le champ de température de la chambre de mise en œuvre peut être ajusté, ce qui permet d'augmenter l'uniformité de la température dans la chambre de mise en œuvre et d'augmenter l'uniformité de l'épaisseur d'un film formé sur la tranche.
(ZH) 一种碳化硅外延设备的CVD反应模块,包括石英壳体(100)、进气法兰(120)和尾端法兰(130),石英壳体(100)内设置有加热层(300)和保温层(200),加热层(300)有多个替换件,替换件内部顶面的弧度不同,作业腔内还设置有用于盛放晶圆的托盘(500),加热层(300)内对应托盘(500)的周围还设置有内衬(310/320),托盘(500)下方设置有用于支撑托盘(500)的顶盘(600),顶盘(600)的底部向外延伸伸展有升降杆(810)。其有益效果为:在内衬(310/320)的厚度增加至托盘(500)无法正常进行CVD工艺时,将托盘(500)位置略微升高,保证能够继续进行CVD工艺,最终达到延长内衬(310/320)使用寿命的目的,通过替换具有不同弧度顶面的加热层(300)能够调整作业腔内的温度场,使得作业腔内的温度更加均匀,进而使得晶圆上形成膜的厚度更加均匀。
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