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1. WO2021080692 - SEMICONDUCTOR STRUCTURES HAVING REDUCED THERMALLY INDUCED BOW

Publication Number WO/2021/080692
Publication Date 29.04.2021
International Application No. PCT/US2020/048880
International Filing Date 01.09.2020
IPC
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 29/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
CPC
H01L 2223/6627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6627Waveguides, e.g. microstrip line, strip line, coplanar line
H01L 2223/6672
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6661for passive devices
6672for integrated passive components, e.g. semiconductor device with passive components only
H01L 2223/6683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6683for monolithic microwave integrated circuit [MMIC]
H01L 23/3732
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3732Diamonds
H01L 23/3738
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3738Semiconductor materials
H01L 23/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for ; , e.g. in combination with batteries
64Impedance arrangements
66High-frequency adaptations
Applicants
  • RAYTHEON COMPANY [US]/[US]
Inventors
  • TYHACH, Matthew, C.
  • VAILLANCOURT, Jarrod
Agents
  • MOFFORD, Donald, F.
  • LANGE, Kristoffer, W.
  • DIMOV, Kiril, O.
  • DALY, Christopher, S.
  • ROBINSON, Kermit
  • DURKEE, Paul, D.
  • MOOSEY, Anthony, T.
  • CROWLEY, Judith, C.
  • DOWNING, Marianne, M.
  • BLAU, David, E.
  • KIM, Do, Te
Priority Data
16/661,27223.10.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURES HAVING REDUCED THERMALLY INDUCED BOW
(FR) STRUCTURES SEMI-CONDUCTRICES AYANT UN ARC INDUIT THERMIQUEMENT RÉDUIT
Abstract
(EN)
A Monolithic Microwave Integrated Circuit (MMIC) structure having a thermally conductive substrate; a semiconductor layer disposed on a first portion of an upper surface of the substrate; an active mesa-shaped semiconductor device layer disposed on the semiconductor layer; and a passive electrical device disposed directly on a second portion of the upper surface of the substrate.
(FR)
La présente invention concerne une structure de circuit intégré monolithique à micro-ondes (MMIC) ayant un substrat thermiquement conducteur; une couche semi-conductrice disposée sur une première partie d'une surface supérieure du substrat; une couche de dispositif semi-conducteur en forme de mésa actif disposée sur la couche semi-conductrice; et un dispositif électrique passif disposé directement sur une seconde partie de la surface supérieure du substrat.
Also published as
Latest bibliographic data on file with the International Bureau