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1. WO2021078682 - NON-POLAR III-NITRIDE BINARY AND TERNARY MATERIALS, METHOD FOR OBTAINING THEREOF AND USES

Publication Number WO/2021/078682
Publication Date 29.04.2021
International Application No. PCT/EP2020/079359
International Filing Date 19.10.2020
IPC
C30B 25/04 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
04Pattern deposit, e.g. by using masks
C30B 25/18 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/40 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds
CPC
C30B 25/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
04Pattern deposit, e.g. by using masks
C30B 25/186
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
186being specially pre-treated by, e.g. chemical or physical means
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
Applicants
  • XIE, Fengjie [CN]/[CN]
  • XIE, Mengyao [CN]/[ES]
Inventors
  • XIE, Mengyao
  • FERNANDO SAAVEDRA, Amalia Luisa
  • BENGOECHEA ENCABO, Ana María
  • ALBERT, Steven
  • CALLEJA PARDO, Enrique
  • SÁNCHEZ GARCÍA, Miguel Angel
  • LÓPEZ-ROMERO MORALEDA, David
Agents
  • UNGRÍA LÓPEZ, Javier
Priority Data
19382929.825.10.2019EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) NON-POLAR III-NITRIDE BINARY AND TERNARY MATERIALS, METHOD FOR OBTAINING THEREOF AND USES
(FR) MATÉRIAUX BINAIRES ET TERNAIRES DE NITRURE III NON POLAIRES, LEUR PROCÉDÉ D'OBTENTION ET LEURS UTILISATIONS
Abstract
(EN)
The invention is aimed at a method for obtaining non-polar III-Nitride compact layers by coalescence of an ordered-array of etched non-polar III-Nitride nanopillars. Besides, the invention also relates to the non-polar III-Nitride binary and ternary compact, continuous (2D) films, layers, or pseudo-substrates, obtainable by means of the disclosed method and having advantageous properties. The invention also includes a specific group of non-polar III-Nitride compact, continuous (2D) films or layers, having one of the components selected from the group consisting of In, Al and both elements, enfolding ordered arrays of non- polar III-Nitride nano-crystals, regardless the method for obtaining thereof, said film or layer being one of the groups consisting of: non-polar InN, non-polar AlN, non-polar GaxAl1-xN, non-polar InxAl1-xN and non-polar GaxIn1-xN, wherein 0(FR)
L'invention vise un procédé d'obtention de couches compactes de nitrure III non polaires par coalescence d'un réseau ordonné de nanopiliers de nitrure III non polaires gravés. En outre, l'invention concerne également les films, les couches ou les pseudo-substrats continus (2D), compacts binaires et ternaires de nitrure III non polaires pouvant être obtenus au moyen du procédé selon l'invention et présentant des propriétés avantageuses. L'invention comprend également un groupe spécifique de films ou couches continus (2D) compacts de nitrure III non polaires, ayant l'un des composants choisis dans le groupe constitué par In, Al et les deux éléments, enveloppant des réseaux ordonnés de nano-cristaux de nitrure III non polaires, indépendamment du procédé d'obtention de ceux-ci, ledit film ou ladite couche étant l'un des groupes consistant en : InN non polaire, AlN non polaire, GaxAl1 -xN non polaire, InxAl1-xN non polaire et GaxIn1- xN non polaire, dans lesquels 0<x<1. Les films ou couches continus (2D), compacts binaires et ternaires de nitrure III non polaires selon l'invention peuvent être utilisés en tant que couches, matrices ou pseudo-substrats sans déformation pour des dispositifs au nitrure III.
Also published as
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