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1. WO2014157571 - ELECTROSTATIC CHUCK

Publication Number WO/2014/157571
Publication Date 02.10.2014
International Application No. PCT/JP2014/059002
International Filing Date 27.03.2014
IPC
H01L 21/683 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
B23Q 3/15 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL, CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
3Devices holding, supporting, or positioning, work or tools, of a kind normally removable from the machine
15Devices for holding work using magnetic or electric force acting directly on the work
H02N 13/00 2006.1
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
13Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
CPC
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H01L 21/6831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
Y10T 279/23
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
279Chucks or sockets
23with magnetic or electrostatic means
Applicants
  • TOTO株式会社 TOTO LTD. [JP]/[JP]
Inventors
  • 穴田 和輝 ANADA, Kazuki
  • 吉井 雄一 YOSHII, Yuichi
Agents
  • 日向寺 雅彦 HYUGAJI, Masahiko
Priority Data
2013-07212129.03.2013JP
2013-07212229.03.2013JP
2014-06487026.03.2014JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTROSTATIC CHUCK
(FR) MANDRIN ÉLECTROSTATIQUE
(JA) 静電チャック
Abstract
(EN)
An electrostatic chuck of the present invention comprises: a ceramic dielectric substrate having a first principal surface on which an object to be suctioned is mounted, a second principal surface located on the opposite side to the first principal surface, and a through-hole provided from the second principal surface to the first principal surface; a metal base plate supporting the ceramic dielectric substrate and having a gas introduction path communicating with the through-hole; and an insulating plug having a ceramic porous body provided in the gas introduction path and a ceramic insulating film provided between the ceramic porous body and the gas introduction path and being denser than the ceramic porous body. In the electrostatic chuck, the ceramic insulating film intrudes into the inside of the ceramic porous body from a surface of the ceramic porous body. This makes it possible to obtain a high withstand voltage against discharge in the gas introduction path or to control the temperature of the object to be suctioned at a highly uniform wafer temperature.
(FR)
La présente invention concerne un mandrin électrostatique qui comprend : un substrat diélectrique en céramique ayant une première surface principale sur laquelle un objet à aspirer est monté, une seconde surface principale située sur le côté opposé à la première surface principale, et un trou traversant disposé entre la seconde surface principale et la première surface principale ; une plaque de base métallique supportant le substrat diélectrique en céramique et ayant un trajet d'introduction de gaz qui communique avec le trou traversant ; et une fiche isolante ayant un corps poreux en céramique disposé dans le trajet d'introduction de gaz et un film isolant en céramique disposé entre le corps poreux en céramique et le trajet d'introduction de gaz et qui est plus dense que le corps poreux en céramique. Dans le mandrin électrostatique, le film isolant en céramique s'introduit dans l'intérieur du corps poreux en céramique à partir d'une surface du corps poreux en céramique. Ceci rend possible d'obtenir une tension de résistance élevée contre une décharge dans le trajet d'introduction de gaz ou la commande de la température de l'objet à aspirer à une température de tranche hautement uniforme.
(JA)
 本発明による静電チャックは、吸着の対象物を載置する第1主面と、第1主面とは反対側の第2主面と、第2主面から第1主面にかけて設けられた貫通孔と、を有するセラミック誘電体基板と、セラミック誘電体基板を支持し、貫通孔と連通するガス導入路を有する金属製のベースプレートと、ガス導入路に設けられたセラミック多孔体と、セラミック多孔体とガス導入路との間に設けられセラミック多孔体よりも緻密なセラミック絶縁膜と、を有する絶縁体プラグと、を備え、セラミック絶縁膜は、セラミック多孔体の表面からセラミック多孔体の内部に食い込んだことを特徴とする。ガス導入路内での放電に対して高い絶縁耐圧を得ることができる、あるいは、吸着の対象物に対してウェーハ温度均一性の高い温度制御を行うことができる。
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