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1. WO2014191163 - METHOD OF SIMULATING FORMATION OF LITHOGRAPHY FEATURES BY SELF-ASSEMBLY OF BLOCK COPOLYMERS

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[ EN ]

Claims

1 . A method comprising:

simulating a self-assembly block copolymer feature, wherein the simulated block copolymer feature comprises a first domain comprising a first polymer type and a second domain comprising a second polymer type;

calculating a minimum energy position of the first domain within the simulated block copolymer feature, wherein the minimum energy position is the position of the first domain at a first energy state of the block copolymer feature, the first energy state being substantially at a minimum energy;

simulating the application of a potential to the block copolymer feature, wherein the potential causes the position of the first domain to be displaced from the minimum energy position;

simulating release of the potential, thereby allowing the energy of the block copolymer feature to relax to substantially the minimum energy;

recording a plurality of energies of the block copolymer feature as the block copolymer feature relaxes to substantially the minimum energy;

recording at each of the plurality of energies a displacement of the first domain from the minimum energy position;

calculating, from the recorded energies of the block copolymer feature and the recorded displacements of the first domain, a probability distribution indicating a probability of the first domain being displaced from the minimum energy position; and calculating, from the probability distribution, an uncertainty in the position of the first domain within the block copolymer feature.

2. The method of claim 1 , wherein the first domain is surrounded by the second domain.

3. The method of claim 1 or claim 2, further comprising determining, from the uncertainty in the position of the first domain within the block copolymer feature, an uncertainty in the position of the first domain on a substrate.

4. The method of any preceding claim, wherein simulating the application of a potential comprises simulating an increase in a chemical potential of the block copolymer feature.

5. The method of any preceding claim, wherein calculating the probability distribution comprises assuming a Boltzmann distribution of energies of the block copolymer feature.

6. The method of any preceding claim, wherein calculating the uncertainty in the position of the first domain within the block copolymer feature comprises fitting a Gaussian distribution to the probability distribution.

7. The method of claim 6, wherein calculating the uncertainty in the position of the first domain within the block copolymer feature further comprises calculating a standard deviation of the Gaussian distribution.

8. The method of any preceding claim, wherein the block copolymer feature is cylindrical.

9. The method of any preceding claim, wherein the first domain is cylindrical.

10. The method of any preceding claim, wherein the minimum energy position is substantially at the geometric center of the block copolymer feature.

1 1 . The method of any preceding claim, wherein the block copolymer feature has a width of between 20 and 100 nanometers.

12. The method of any preceding claim, wherein the first domain has a width of between 5 and 50 nanometers.

13. The method of any preceding claim, further comprising using the calculated uncertainty in the position of the first domain within the block copolymer feature to design a recess pattern for pre-patterning a substrate.

14. The method of claim 13, wherein designing the recess pattern for pre-patterning a substrate comprises simulating a lithographic process.

15. The method of claim 3 or any claim dependent thereon, further comprising using the calculated uncertainty in the position of the first domain on a substrate to design a recess pattern for pre-patterning a substrate.

16. The method of any of claims 13 to 15, further comprising pre-patterning a substrate based on the designed recess pattern.

17. The method of any preceding claim, further comprising designing a component for manufacture using a self-assembly block copolymer based upon the calculated uncertainty in the position of the first domain within the block copolymer feature.

18. The method of claim 17, further comprising forming a pattern of features which comprises the component on a substrate according to the design using a self-assembly block copolymer.

19. A method of forming a pattern of features on a substrate with the use of a self-assembly block copolymer, the method comprising:

simulating a block copolymer feature, wherein the simulated block copolymer feature comprises a first domain comprising a first polymer type and a second domain comprising a second polymer type;

calculating a minimum energy position of the first domain within simulated the block copolymer feature, wherein the minimum energy position is the position of the first domain at a first energy state of the block copolymer feature, the first energy state being substantially a minimum energy;

simulating the application of a potential to the block copolymer feature, wherein the potential causes the position of the first domain to be displaced from the minimum energy position;

simulating release of the potential, thereby allowing the energy of the block copolymer feature to relax to substantially the minimum energy;

recording a plurality of energies of the block copolymer feature as the block copolymer feature relaxes to substantially the minimum energy;

recording at each of the plurality of energies a displacement of the first domain from the minimum energy position;

calculating, from the recorded energies of the block copolymer feature and the recorded displacements of the first domain, a probability distribution indicating a probability of the first domain being displaced from the minimum energy position; calculating, from the probability distribution, an uncertainty in the position of the first domain within the block copolymer feature;

using the uncertainty in the position of the first domain within the self-assembly block copolymer feature to design a pattern of features; and

forming the pattern of features on the substrate according to the design.

20. A computer program comprising computer readable instructions configured to cause a computer to carry out a method according to any of claims 1 to 19.

21 . A computer readable medium carrying a computer program according to claim 20.

22. A computer apparatus comprising:

a memory storing processor readable instructions, and

a processor arranged to read and execute instructions stored in the memory, wherein the processor readable instructions comprise instructions arranged to control the computer to carry out the method according to any of claims 1 to 19.