(12) International Application Status Report

Received at International Bureau: 27 December 2018 (27.12.2018)

Information valid as of: 25 May 2020 (25.05.2020)

Report generated on: 24 September 2020 (24.09.2020)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2020/11357811 June 2020 (11.06.2020) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/CN2018/11990807 December 2018 (07.12.2018) English (EN)


(51) International Patent Classification:
H01L 27/24 (2006.01)

(71) Applicant(s):
YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN/CN]; Room 7018, No. 18, Huaguang Road Guandong Science and Technology Industrial Park East Lake Development Zone Wuhan, Hubei 430074 (CN) (for all designated states)

(72) Inventor(s):
SONG, Yali; Room 7018, No. 18, Huaguang Road Guandong Science and Technology Industrial Park East Lake Development Zone Wuhan, Hubei 430074 (CN)
XIAO, Lihong; Room 7018, No. 18, Huaguang Road Guandong Science and Technology Industrial Park East Lake Development Zone Wuhan, Hubei 430074 (CN)
WANG, Ming; Room 7018, No. 18, Huaguang Road Guandong Science and Technology Industrial Park East Lake Development Zone Wuhan, Hubei 430074 (CN)

(74) Agent(s):
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.; 10th Floor, Tower C, Beijing Global Trade Center 36 North Third Ring Road East, Dongcheng District Beijing 100013 (CN)

(54) Title (EN): NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
(54) Title (FR): NOUVEAU DISPOSITIF DE MÉMOIRE NON-ET 3D ET PROCÉDÉ DE FORMATION ASSOCIÉ

(57) Abstract:
(EN): A 3D-NAND memory device is provided. The memory device includes a substrate, a bottom select gate (BSG) disposed over the substrate, a plurality of word lines positioned over the BSG with a staircase configuration and a plurality of insulating layers disposed between the substrate, the BSG, and the plurality of word lines. In the disclosed memory device, one or more first dielectric trenches are formed in the BSG and extend in a length direction of the substrate to separate the BSG into a plurality of sub-BSGs. In addition, one or more common source regions are formed over the substrate and extend in the length direction of the substrate. The one or more common source regions further extend through the BSG, the plurality of word lines and the plurality of insulating layers.
(FR): L'invention concerne un dispositif de mémoire NON-ET 3D. Le dispositif de mémoire selon l'invention comprend un substrat, une grille de sélection inférieure (BSG) disposée sur le substrat, une pluralité de lignes de mots placées sur la BSG avec une configuration en escalier, et une pluralité de couches isolantes disposées entre le substrat, la BSG et la pluralité de lignes de mots. Dans le dispositif de mémoire selon l'invention, au moins une première tranchée diélectrique est formée dans la BSG et s'étend dans le sens de la longueur du substrat afin de diviser la BSG en une pluralité de sous-BSG. En outre, au moins une région source commune est formée sur le substrat et s'étend dans le sens de la longueur du substrat. Ladite région source commune au moins s'étend également sur la BSG, la pluralité de lignes de mots et la pluralité de couches isolantes.

International search report:
Received at International Bureau: 19 September 2019 (19.09.2019) [CN]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM