(12) International Application Status Report

Received at International Bureau: 27 November 2019 (27.11.2019)

Information valid as of: 16 March 2020 (16.03.2020)

Report generated on: 27 September 2020 (27.09.2020)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2020/11234004 June 2020 (04.06.2020) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/US2019/06081512 November 2019 (12.11.2019) English (EN)

(31) Priority number(s): (32) Priority date(s): (33) Priority status:
62/771,337 (US)26 November 2018 (26.11.2018) Priority document received (in compliance with PCT Rule 17.1)

(51) International Patent Classification:
G02B 26/00 (2006.01); H01L 21/027 (2006.01); H01L 21/00 (2006.01); H01L 27/00 (2006.01)

(71) Applicant(s):
CORNING INCORPORATED [US/US]; 1 Riverfront Plaza Corning, New York 14831 (US) (for all designated states)

(72) Inventor(s):
WYNNE, Thomas M.; 236 W. Victoria St., Apt. 7 Santa Barbara, California 93101 (US)

(74) Agent(s):
HOOD, Michael A.; CORNING INCORPORATED Intellectual Property Department SP-TI-03-1 Corning, New York 14831 (US)

(54) Title (EN): METHODS FOR FORMING PATTERNED INSULATING LAYERS ON CONDUCTIVE LAYERS AND DEVICES MANUFACTURED USING SUCH METHODS
(54) Title (FR): PROCÉDÉS DE FORMATION DE COUCHES ISOLANTES À MOTIFS SUR DES COUCHES CONDUCTRICES ET DISPOSITIFS FABRIQUÉS À L'AIDE DE TELS PROCÉDÉS

(57) Abstract:
(EN): A method for forming a patterned insulating layer on a conductive layer can include removing an annular region of an insulating layer overlying a perimeter of an opening in a mask by laser ablation. The mask can be removed from the conductive layer to remove an excess portion of the insulating layer disposed on the mask, whereby a remaining portion of the insulating layer defines the patterned insulating layer disposed on the central region of the conductive layer, and a surrounding region of the conductive layer surrounding the central region of the conductive layer is uncovered by the patterned insulating layer.
(FR): Le procédé de formation d'une couche isolante à motifs sur une couche conductrice peut comprendre l'élimination d'une région annulaire d'une couche isolante recouvrant un périmètre d'une ouverture dans un masque par ablation laser. Le masque peut être retiré de la couche conductrice pour retirer une partie excédentaire de la couche isolante disposée sur le masque, une partie restante de la couche isolante délimitant la couche isolante à motifs disposée sur la région centrale de la couche conductrice, et une région environnante de la couche conductrice entourant la région centrale de la couche conductrice n'es pas couverte par la couche isolante à motifs.

International search report:
Received at International Bureau: 05 March 2020 (05.03.2020) [US]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM