(12) International Application Status Report

Received at International Bureau: 11 December 2019 (11.12.2019)

Information valid as of: 26 December 2019 (26.12.2019)

Report generated on: 26 September 2020 (26.09.2020)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2020/11106804 June 2020 (04.06.2020) Japanese (JA)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/JP2019/04619426 November 2019 (26.11.2019) Japanese (JA)

(31) Priority number(s): (32) Priority date(s): (33) Priority status:
2018-224149 (JP)29 November 2018 (29.11.2018) Priority document received (in compliance with PCT Rule 17.1)

(51) International Patent Classification:
C08F 220/22 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); H01L 21/027 (2006.01)

(71) Applicant(s):
JSR CORPORATION [JP/JP]; 9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo 1058640 (JP) (for all designated states)

(72) Inventor(s):
ABE Tsubasa; c/o JSR CORPORATION, 9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo 1058640 (JP)
WAKAMATSU Gouji; c/o JSR Electronic Materials Korea Co., Ltd., Samwhan HIPEX A-610, 240, Pangyoyeok-ro, Bundanggu, Seongnam-si, Gyeonggi-do 13493 (KR)

(74) Agent(s):
AMANO Kazunori; c/o Amano & Partners, 6th Floor, Fujikogyo Building, 1-18, Aioi-cho 1-chome, Chuo-ku, Kobe-shi, Hyogo 6500025 (JP)

(54) Title (EN): COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND METHOD FOR FORMING RESIST PATTERN
(54) Title (FR): COMPOSITION POUR FORMER UN FILM DE SOUS-COUCHE DE RÉSERVE, FILM DE SOUS-COUCHE DE RÉSERVE ET PROCÉDÉ DE PRODUCTION DE MOTIF DE RÉSERVE
(54) Title (JA): レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法

(57) Abstract:
(EN): The present invention is a composition for forming a resist underlayer film, which contains a compound having an aromatic ring, a polymer having a fluorine atom, and an organic solvent, and which is configured such that the polymer having a fluorine atom has a first structural unit represented by formula (1) and a second structural unit represented by formula (2). In formula (1), R1 represents a monovalent organic group having a fluorine atom and 1-20 carbon atoms; and R2 represents a hydrogen atom or a monovalent hydrocarbon group having 1-20 carbon atoms. In formula (2), R3 represents a monovalent hydrocarbon group having 1-20 carbon atoms; and R4 represents a hydrogen atom or a monovalent hydrocarbon group having 1-20 carbon atoms.
(FR): La présente invention concerne une composition pour former un film de sous-couche de réserve, qui contient un composé comprenant un cycle aromatique, un polymère comprenant un atome de fluor et un solvant organique, et qui est conçue de telle sorte que le polymère comprenant un atome de fluor comporte un premier motif structural représenté par la formule (1) et un second motif structural représenté par la formule (2). Dans la formule (1), R1 représente un groupe organique monovalent comprenant un atome de fluor et de 1 à 20 atomes de carbone ; et R2 représente un atome d'hydrogène ou un groupe hydrocarbure monovalent comprenant de 1 à 20 atomes de carbone. Dans la formule (2), R3 représente un groupe hydrocarbure monovalent comprenant de 1 à 20 atomes de carbone ; et R4 représente un atome d'hydrogène ou un groupe hydrocarbure monovalent comprenant de 1 à 20 atomes de carbone.
(JA): 本発明は、芳香環を有する化合物と、フッ素原子を有する重合体と、有機溶媒とを含有し、上記フッ素原子を有する重合体が、下記式(1)で表される第1構造単位と、下記式(2)で表される第2構造単位とを有するレジスト下層膜形成用組成物である。下記式(1)中、R1は、フッ素原子を有する炭素数1~20の1価の有機基である。R2は、水素原子又は炭素数1~20の1価の炭化水素基である。下記式(2)中、R3は、炭素数1~20の1価の炭化水素基である。R4は、水素原子又は炭素数1~20の1価の炭化水素基である。

International search report:
Received at International Bureau: 02 March 2020 (02.03.2020) [JP]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM