(12) International Application Status Report

Received at International Bureau: 12 December 2018 (12.12.2018)

Information valid as of: 18 December 2018 (18.12.2018)

Report generated on: 27 September 2020 (27.09.2020)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2020/11029904 June 2020 (04.06.2020) Japanese (JA)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/JP2018/04422130 November 2018 (30.11.2018) Japanese (JA)


(51) International Patent Classification:
H01L 21/338 (2006.01); H01L 29/812 (2006.01)

(71) Applicant(s):
MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP) (for all designated states)

(72) Inventor(s):
YAMAGUCHI, Yutaro; c/o Mitsubishi Electric Corporation, 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP)
OTSUKA, Tomohiro; c/o Mitsubishi Electric Corporation, 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP)
HANGAI, Masatake; c/o Mitsubishi Electric Corporation, 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP)
SHINJO, Shintaro; c/o Mitsubishi Electric Corporation, 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP)

(74) Agent(s):
TAZAWA, Hideaki; Akasaka Sanno Center Bldg. 5F, 12-4, Nagata-cho 2-chome, Chiyoda-ku, Tokyo 1000014 (JP)

(54) Title (EN): SEMICONDUCTOR DEVICE
(54) Title (FR): DISPOSITIF À SEMI-CONDUCTEUR
(54) Title (JA): 半導体装置

(57) Abstract:
(EN): A semiconductor device comprising a plurality of gate fingers (2-1 - 2-8) extending symmetrically from both sides of a gate connection part (2a-1 - 2a-3), a drain electrode (3-1, 3-2) adjacent to both of the gate fingers (2-1 - 2-8) extending from both sides of the gate connection part (2a-1 - 2a-3), and a plurality of source electrodes (4-1 - 4-6) adjacent to the gate fingers (2-1 - 2-8) extending from both sides of the gate connection part (2a-1 - 2a-3), wherein a gate air bridge (8-1 - 8-3) connects the gate connection part (2a-1 - 2a-3) to a gate routing line (6) over a source electrode (4-2, 4-4, 4-6).
(FR): La présente invention porte sur un dispositif à semi-conducteur comprenant une pluralité de doigts de grille (2-1 - 2-8) partant symétriquement des deux côtés d'une partie de connexion de grille (2a-1 - 2a3), une électrode drain (3-1, 3-2) adjacente aux deux doigts de grille (2-1 - 2-8) partant des deux côtés de la partie de connexion de grille (2a-1 - 2a-3), et une pluralité d'électrodes source (4-1 - 4-6) adjacentes aux doigts de grille (2-1 - 2-8) partant des deux côtés de la partie de connexion de grille (2a-1 - 2a-3), un pont aérien de grille (8-1 - 8-3) connectant la partie de connexion de grille (2a-1 - 2a3) à une ligne de routage de grille (6) au-dessus d'une électrode source (4-2, 4-4, 4-6).
(JA): ゲート接続部(2a-1~2a-3)の両側から対称的に延びた複数のゲートフィンガー(2-1~2-8)と、ゲート接続部(2a-1~2a-3)の両側から延びたゲートフィンガー(2-1~2-8)の両方に隣接しているドレイン電極(3-1,3-2)と、ゲート接続部(2a-1~2a-3)の両側から延びたゲートフィンガー(2-1~2-8)に個々に隣接している複数のソース電極(4-1~4-6)とを備え、ゲートエアブリッジ(8-1~8-3)が、ソース電極(4-2,4-4,4-6)を跨いでゲート接続部(2a-1~2a-3)とゲート引き回し線路(6)とを接続している。

International search report:
Received at International Bureau: 04 March 2019 (04.03.2019) [JP]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM