(12) International Application Status Report

Received at International Bureau: 20 October 2018 (20.10.2018)

Information valid as of: 14 March 2019 (14.03.2019)

Report generated on: 21 July 2019 (21.07.2019)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2019/06801204 April 2019 (04.04.2019) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/US2018/05359028 September 2018 (28.09.2018) English (EN)

(31) Priority number(s): (32) Priority date(s): (33) Priority status:
15/721,351 (US)29 September 2017 (29.09.2017) Priority document received (in compliance with PCT Rule 17.1)

(51) International Patent Classification:
G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01)

(71) Applicant(s):
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549 (US) (for all designated states)

(72) Inventor(s):
MADRASWALA, Aliasgar S.; 299 Hinds Way Folsom, California 95630 (US)
GUO, Xin; 1021 White Oak Drive San Jose, California 95129 (US)
PRABHU, Naveen Vittal; 1384 Freswick Dr. Folsom, California 95630 (US)
DU, Yu; 1601 Warburton Ave., Apt 11 Santa Clara, California 95050 (US)
SULE, Purval Shyam; 1780 Creekside Drive, Apt. 2318 Folsom, California 95630 (US)

(74) Agent(s):
CASPER, Derek; Alliance IP, LLC 20 E. Thomas Rd., Suite 2200, PMB 96 Phoenix, Arizona 85012 (US)

(54) Title (EN): METHOD AND APPARATUS FOR SPECIFYING READ VOLTAGE OFFSETS FOR A READ COMMAND
(54) Title (FR): PROCÉDÉ ET APPAREIL POUR SPÉCIFIER DES DÉCALAGES DE TENSION DE LECTURE POUR UNE COMMANDE DE LECTURE

(57) Abstract:
(EN): In one embodiment, an apparatus comprises a memory array and a controller. The controller is to receive a first read command specifying a read voltage offset profile identifier; identify a read voltage offset profile associated with the read voltage offset profile identifier, the read voltage offset profile comprising at least one read voltage offset; and perform a first read operation specified by the first read command using at least one read voltage adjusted according to the at least one read voltage offset of the read voltage offset profile.
(FR): Selon un mode de réalisation, l'invention concerne une matrice mémoire et un contrôleur. Le contrôleur est destiné à recevoir une première commande de lecture spécifiant un identifiant de profil de décalage de tension de lecture ; à identifier un profil de décalage de tension de lecture associé à l'identifiant de profil de décalage de tension de lecture, le profil de décalage de tension de lecture comprenant au moins un décalage de tension de lecture ; et à effectuer une première opération de lecture spécifiée par la première commande de lecture à l'aide d'au moins une tension de lecture ajustée selon le ou les décalages de tension de lecture du profil de décalage de tension de lecture.

International search report:
Received at International Bureau: 29 January 2019 (29.01.2019) [KR]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM

Declarations:
Declaration made as applicant's entitlement, as at the international filing date, to apply for and be granted a patent (Rules 4.17(ii) and 51bis.1(a)(ii)), in a case where the declaration under Rule 4.17(iv) is not appropriate
Declaration made as applicant's entitlement, as at the international filing date, to claim the priority of the earlier application, where the applicant is not the applicant who filed the earlier application or where the applicant's name has changed since the filing of the earlier application (Rules 4.17(iii) and 51bis.1(a)(iii))