(12) International Application Status Report

Received at International Bureau: 07 October 2017 (07.10.2017)

Information valid as of: 14 November 2017 (14.11.2017)

Report generated on: 22 July 2019 (22.07.2019)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2019/06678904 April 2019 (04.04.2019) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/US2017/05358427 September 2017 (27.09.2017) English (EN)


(51) International Patent Classification:
H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01)

(71) Applicant(s):
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054 (US) (for all designated states)

(72) Inventor(s):
DASGUPTA, Sansaptak; 132 NE Greenridge Terrace Hillsboro, Oregon 97124 (US)
RADOSAVLJEVIC, Marko; 3684 NW Loriann Portland, Oregon 97229 (US)
THEN, Han Wui; 4191 NW 127th Ave Portland, Oregon 97229 (US)
FISCHER, Paul; 1558 NW 129th Place Portland, Oregon 97229 (US)
LIN, Kevin; 19953 SW Mohican St. Beaverton, Oregon 97006 (US)

(74) Agent(s):
HOWARD, James; Green, Howard and Mughal LLP 5 Centerpointe Drive Suite 400 Lake Oswego, Oregon 97035 (US)

(54) Title (EN): EPITAXIAL III-N NANORIBBON STRUCTURES FOR DEVICE FABRICATION
(54) Title (FR): STRUCTURES DE NANORUBAN III-N ÉPITAXIALES POUR LA FABRICATION DE DISPOSITIFS

(57) Abstract:
(EN): A structure, comprising an island comprising a III-N material. The island extends over a substrate and has a sloped sidewall. A cap comprising a III-N material extends laterally from a top surface and overhangs the sidewall of the island. A device, such as a transistor, light emitting diode, or resonator, may be formed within, or over, the cap.
(FR): L'invention concerne une structure comprenant un îlot comprenant un matériau III-N. L'îlot s'étend sur un substrat et présente une paroi latérale inclinée. Un capot comprenant un matériau III-N s'étend latéralement à partir d'une surface supérieure et surplombe la paroi latérale de l'îlot. Un dispositif, tel qu'un transistor, une diode électroluminescente ou un résonateur, peut être formé à l'intérieur ou au-dessus du capot.

International search report:
Received at International Bureau: 28 June 2018 (28.06.2018) [KR]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM

Declarations:
Declaration as to non-prejudical disclosures or exceptions to lack of novelty (Rules 4.17(v) and 51bis.1(a)(v))