(12) International Application Status Report

Received at International Bureau: 15 September 2018 (15.09.2018)

Information valid as of: 01 October 2018 (01.10.2018)

Report generated on: 25 February 2020 (25.02.2020)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2019/04605007 March 2019 (07.03.2019) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/US2018/04735921 August 2018 (21.08.2018) English (EN)

(31) Priority number(s): (32) Priority date(s): (33) Priority status:
15/688,645 (US)28 August 2017 (28.08.2017) Priority document received (in compliance with PCT Rule 17.1)

(51) International Patent Classification:
G11C 16/20 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G06F 12/02 (2006.01)

(71) Applicant(s):
MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way Boise, Idaho 83716-9632 (US) (for all designated states)

(72) Inventor(s):
BINFET, Jeremy; 8000 S. Federal Way Boise, Idaho 83716-9632 (US)
HELM, Mark; 8000 S. Federal Way Boise, Idaho 83716-9632 (US)
FILIPIAK, William; 8000 S. Federal Way Boise, Idaho 83716-9632 (US)
HAWES, Mark; 8000 S. Federal Way Boise, Idaho 83716-9632 (US)

(74) Agent(s):
HARRIS, Philip W.; Holland & Hart LLP P.O. Box 11583 Salt Lake City, Utah 84147 (US)

(54) Title (EN): MEMORY ARRAY RESET READ OPERATION
(54) Title (FR): OPÉRATION DE LECTURE DE RÉINITIALISATION DE RÉSEAU DE MÉMOIRE

(57) Abstract:
(EN): Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.
(FR): L'invention concerne des systèmes, des dispositifs et des procédés se rapportant à une lecture de réinitialisation. Une lecture de réinitialisation peut être utilisée pour initier une transition d'une partie du réseau de mémoire dans un premier état ou pour maintenir une partie du réseau de mémoire dans un premier état, tel qu'un état transitoire. Une lecture de réinitialisation peut fournir une option hautement parallélisée et économe en énergie pour garantir que des blocs de mémoire sont dans le premier état. Divers modes de lecture de réinitialisation peuvent être configurés selon différentes entrées.

International search report:
Received at International Bureau: 10 December 2018 (10.12.2018) [KR]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM

Declarations:
Declaration made as applicant's entitlement, as at the international filing date, to apply for and be granted a patent (Rules 4.17(ii) and 51bis.1(a)(ii)), in a case where the declaration under Rule 4.17(iv) is not appropriate
Declaration made as applicant's entitlement, as at the international filing date, to claim the priority of the earlier application, where the applicant is not the applicant who filed the earlier application or where the applicant's name has changed since the filing of the earlier application (Rules 4.17(iii) and 51bis.1(a)(iii))