(12) International Application Status Report

Received at International Bureau: 24 January 2016 (24.01.2016)

Information valid as of: 17 September 2018 (17.09.2018)

Report generated on: 26 February 2020 (26.02.2020)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2017/11181629 June 2017 (29.06.2017) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/US2015/00037326 December 2015 (26.12.2015) English (EN)


(51) International Patent Classification:
H01L 29/78 (2006.01); H01L 21/336 (2006.01)

(71) Applicant(s):
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054 (US) (for all designated states)

(72) Inventor(s):
SHARMA, Vyom; 9244 NW Burntknoll Ct. Portland, Oregon 97229 (US)
BAMBERY, Rohan K; 2499 NW 206th Ave. Apt. 208 Hillsboro, Oregon 97006 (US)
AUTH, Christopher P.; 10326 NW Langworthy Terrace Portland, Oregon 97229 (US)
LIAO, Szuya S.; 7214 NE Shaleen St. Hillsboro, Oregon 97124 (US)
THAREJA, Gaurav; 6211 NE Carillion Dr. Unit # 207 Hillsboro, Oregon 97124 (US)

(74) Agent(s):
RICHARDS, II, E.E. "Jack"; Trop, Pruner & Hu, P.C. 1616 S. Voss Rd., Ste. 750 Houston, Texas 77057-2631 (US)

(54) Title (EN): CONFINED AND SCALABLE HELMET
(54) Title (FR): CASQUE CONFINÉ ET EXTENSIBLE

(57) Abstract:
(EN): An embodiment includes a system comprising: a first gate and a first contact that correspond to a transistor and are on a first fin; a second gate and a second contact that correspond to a transistor and are on a second fin; an interlayer dielectric (ILD) collinear with and between the first and second contacts; wherein (a) the first and second gates are collinear and the first and second contacts are collinear; (b) the ILD includes a recess that comprises a cap layer including at least one of an oxide and a nitride. Other embodiments are described herein.
(FR): Selon un mode de réalisation, l'invention concerne un système comprenant : une première grille et un premier contact qui correspondent à un transistor et sont situés sur une première ailette ; une seconde grille et un second contact qui correspondent à un transistor et se trouvent sur une seconde ailette ; et un diélectrique intercouche (ILD) colinéaire avec les premier et second contacts et situé entre ces derniers ; dans lequel (a) les première et seconde grilles sont colinéaires et les premier et second contacts sont colinéaires ; et (b) l'ILD comporte un évidement qui comprend une couche de recouvrement comprenant un oxyde et/ou un nitrure. D'autres modes de réalisation sont décrits dans la description.

International search report:
Received at International Bureau: 26 August 2016 (26.08.2016) [KR]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, RU, TJ, TM

Declarations:
Declaration made as to the identity of the inventor (PCT Rules 4.17(i) and 51bis.1(a)(i))
Declaration made as applicant's entitlement, as at the international filing date, to apply for and be granted a patent (Rules 4.17(ii) and 51bis.1(a)(ii)), in a case where the declaration under Rule 4.17(iv) is not appropriate