(12) International Application Status Report

Received at International Bureau: 15 November 2007 (15.11.2007)

Information valid as of: 17 January 2009 (17.01.2009)

Report generated on: 15 November 2019 (15.11.2019)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2008/06264229 May 2008 (29.05.2008) Japanese (JA)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/JP2007/07115924 October 2007 (24.10.2007) Japanese (JA)

(31) Priority number(s): (32) Priority date(s): (33) Priority status:
2006-315050 (JP)22 November 2006 (22.11.2006) Priority document received (in compliance with PCT Rule 17.1)

(51) International Patent Classification:
H05B 33/26 (2006.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01); H01L 51/30 (2006.01); H01L 51/40 (2006.01); H01L 51/50 (2006.01); H05B 33/10 (2006.01)

(71) Applicant(s):
NEC Corporation [JP/JP]; 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP) (for all designated states except US)
National Institute of Advanced Industrial Science and Technology [JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921 (JP) (for all designated states except US)
HIURA, Hidefumi [JP/JP]; c/o NEC Corporation, 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP) (for US only)
TOGUCHI, Satoru [JP/JP]; c/o NEC Corporation, 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP) (for US only)
TADA, Tetsuya [JP/JP]; c/o National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1, Higashi 1-chome, Tsukuba-shi, Ibaraki 3058562 (JP) (for US only)
KANAYAMA, Toshihiko [JP/JP]; c/o National Institute of Advanced Industrial Science and Technology, 16-1, Onogawa, Tsukuba-shi, Ibaraki 3058569 (JP) (for US only)

(72) Inventor(s):
HIURA, Hidefumi; c/o NEC Corporation, 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP)
TOGUCHI, Satoru; c/o NEC Corporation, 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP)
TADA, Tetsuya; c/o National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1, Higashi 1-chome, Tsukuba-shi, Ibaraki 3058562 (JP)
KANAYAMA, Toshihiko; c/o National Institute of Advanced Industrial Science and Technology, 16-1, Onogawa, Tsukuba-shi, Ibaraki 3058569 (JP)

(74) Agent(s):
IKEDA, Noriyasu; Hibiya Daibiru Bldg., 2-2, Uchisaiwaicho 1-chome Chiyoda-ku, Tokyo 1000011 (JP)

(54) Title (EN): SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
(54) Title (FR): DISPOSITIF SEMICONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(54) Title (JA): 半導体装置及びその製造方法

(57) Abstract:
(EN): A semiconductor device having such a structure as a light emitting layer of an organic matter or the like is sandwiched between a work function control single layer carbon nanotube cathode including donor of low ionization potential and a work function control single layer carbon nanotube anode including accepter of large electron affinity. A semiconductor device represented by an organic field effect light emitting element which can reduce emission start voltage, enhance characteristics/function such as emission efficiency, enhance reliability such as the lifetime, and enhance productivity such as reduction in fabrication cost is provided along with its fabrication process.
(FR): L'invention concerne un dispositif semi-conducteur ayant une structure telle qu'une couche électroluminescente d'une matière organique ou similaire est prise en sandwich entre une cathode à nano tubes de carbone à une seule couche de commande de travail d'extraction comprenant un donneur à faible potentiel d'ionisation et une anode à nano tubes de carbone à une seule couche de commande de travail d'extraction comprenant un accepteur à affinité électronique importante. L'invention concerne également un dispositif semi-conducteur représenté par un élément d'émission de lumière à effet de champ organique, qui peut réduire la tension de début d'émission, augmenter les caractéristiques/la fonction telles que l'efficacité d'émission, augmenter la fiabilité telle que la durée de vie, et augmenter la productivité, de telle sorte que la réduction du coût de fabrication, ainsi que son procédé de fabrication.
(JA):  有機物などの発光層が、イオン化ポテンシャルが小さいドナーを内包させた仕事関数制御単層カーボンナノチューブ陰極と電子親和力の大きいアクセプターを内包させた仕事関数制御単層カーボンナノチューブ陽極に挟まれた構造を持つ半導体装置である。発光開始電圧の低減、高発光効率などの特性・性能向上、長寿命化などの信頼性向上、製造コスト削減などの生産性向上が可能となる有機電界効果発光素子に代表される半導体装置とその製法を提供する。

International search report:
Received at International Bureau: 13 December 2007 (13.12.2007) [JP]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
European Patent Office (EPO) : AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, MD, RU, TJ, TM