(12) International Application Status Report

Received at International Bureau: 24 June 2004 (24.06.2004)

Information valid as of: Not available

Report generated on: 16 January 2021 (16.01.2021)

(10) Publication number: (43) Publication date: (26) Publication language:
WO 2004/10032418 November 2004 (18.11.2004) English (EN)

(21) Application number: (22) Filing date: (25) Filing language:
PCT/US2004/01162015 April 2004 (15.04.2004) English (EN)

(31) Priority number(s): (32) Priority date(s): (33) Priority status:
10/429,261 (US)02 May 2003 (02.05.2003) Priority document received (in compliance with PCT Rule 17.1)

(51) International Patent Classification:
H01S 3/09 (2006.01); H01S 3/091 (2006.01)

(71) Applicant(s):
LIGHTWAVE ELECTRONICS CORPORATION [US/US]; 2400 Charleston Road Mountain View, California 94043 (US) (for all designated states except US)
ARBORE, Mark [US/US]; 171 Pepper Court Los Altos, California 94022 (US) (for US only)
BLACK, John [GB/US]; 2276 Allegheny Way San Mateo, California 94402 (US) (for US only)
GROSSMAN, William [US/US]; 1315 Garthwick Drive Los Altos, California 94024 (US) (for US only)

(72) Inventor(s):
ARBORE, Mark; 171 Pepper Court Los Altos, California 94022 (US)
BLACK, John; 2276 Allegheny Way San Mateo, California 94402 (US)
GROSSMAN, William; 1315 Garthwick Drive Los Altos, California 94024 (US)

(74) Agent(s):
ISENBERG, Joshua; 204 Castro Lane Fremont, California 94539 (US)

(54) Title (EN): LASER RESISTANT TO INTERNAL IR-INDUCED DAMAGE
(54) Title (FR): LASER RESISTANT AUX DOMMAGES INDUITS PAR LE RAYONNEMENT INFRAROUGE INTERNE

(57) Abstract:
(EN): Co-doping the gain medium (102) of a diode-pumped laser (100) to make the laser resistant to long-term degradation from high-intensity internal infrared radiation is disclosed. Co-doping the gain medium (102) with ions such as Cr3+ that make the gain medium (102) resistant to external ionizing radiation solves problems of long-term degradation of the gain medium (102).
(FR): Le milieu actif d'un laser infrarouge à diode de pompage est co-dopé de manière à rendre le laser résistant à la dégradation à long terme provoquée par le rayonnement infrarouge interne à haute intensité. Le co-dopage du milieu actif avec des ions tels que Cr3+ et Ce3+ qui rendent ledit milieu actif résistant au rayonnement ionisant externe résout le problème de la dégradation à long terme du milieu actif.

International search report:
Received at International Bureau: 21 September 2005 (21.09.2005) [US]

International Report on Patentability (IPRP) Chapter II of the PCT:
Not available

(81) Designated States:
AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
European Patent Office (EPO) : AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR
African Intellectual Property Organization (OAPI) : BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG
African Regional Intellectual Property Organization (ARIPO) : BW, GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW
Eurasian Patent Organization (EAPO) : AM, AZ, BY, KG, KZ, MD, RU, TJ, TM

Declarations:
Declaration of inventorship (Rules 4.17(iv) and 51bis.1(a)(iv)) for the purposes of the designation of the United States of America