In Bearbeitung

Bitte warten ...

Einstellungen

Einstellungen

Gehe zu Anmeldung

1. JP2018101677 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Amt Japan
Aktenzeichen/Anmeldenummer 2016246146
Anmeldedatum 20.12.2016
Veröffentlichungsnummer 2018101677
Veröffentlichungsdatum 28.06.2018
Veröffentlichungsart A
IPC
H01L 21/304
HElektrotechnik
01Grundlegende elektrische Bauteile
LHalbleiterbauelemente; elektrische Festkörperbauelemente, soweit nicht anderweitig vorgesehen
21Verfahren oder Geräte, besonders ausgebildet für die Herstellung oder Behandlung von Halbleiter- oder Festkörperbauelementen oder Teilen davon
02Herstellung oder Behandlung von Halbleiterbauelementen oder Teilen davon
04Bauelemente mit mindestens einer Potenzialsprung-Sperrschicht oder Oberflächensperrschicht, z.B. PN-Übergang, Verarmungsschicht, Anreicherungsschicht
18Bauelemente mit Halbleiterkörpern aus Elementen der Gruppe IV des Periodensystems oder AIIIBV-Verbindungen mit oder ohne Fremdstoffe, z.B. Dotierungsmaterialien
30Behandlung von Halbleiterkörpern unter Verwendung von Verfahren oder Vorrichtungen, soweit nicht von H01L21/20-H01L21/26152
302zur Änderung der physikalischen Oberflächenbeschaffenheit oder zur Änderung der Form, z.B. Ätzen, Polieren, Sägen, Schneiden
304Mechanische Behandlung, z.B. Schleifen, Polieren, Sägen, Schneiden
B01D 19/00
BArbeitsverfahren; Transportieren
01Physikalische oder chemische Verfahren oder Vorrichtungen allgemein
DTrennen
19Entgasen von Flüssigkeiten
CPC
B01F 3/04113
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
FMIXING, e.g. DISSOLVING, EMULSIFYING, DISPERSING
3Mixing, e.g. dispersing, emulsifying, according to the phases to be mixed
04gases or vapours with liquids
04099Introducing a gas or vapour into a liquid medium, e.g. producing aerated liquids
04106the gas being introduced by bubbling, e.g. within receptacles or tanks
04113Arrangement or manipulation of the gas bubbling devices
B01F 3/04248
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
FMIXING, e.g. DISSOLVING, EMULSIFYING, DISPERSING
3Mixing, e.g. dispersing, emulsifying, according to the phases to be mixed
04gases or vapours with liquids
04099Introducing a gas or vapour into a liquid medium, e.g. producing aerated liquids
04106the gas being introduced by bubbling, e.g. within receptacles or tanks
04113Arrangement or manipulation of the gas bubbling devices
04241Diffusers
04248having injection means, e.g. nozzles with circumferential outlet
B01F 5/04
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
FMIXING, e.g. DISSOLVING, EMULSIFYING, DISPERSING
5Flow mixers
04Injector mixers ; , i.e. one or more components being added to a flowing main component
H01L 21/02057
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
B01D 19/0005
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
0005with one or more auxiliary substances
Anmelder SCREEN HOLDINGS CO LTD
株式会社SCREENホールディングス
Erfinder YASUDA SHUICHI
安田 周一
IWAO MICHINORI
岩尾 通矩
KIKUMOTO NORIYUKI
菊本 憲幸
SASAKI MITSUTOSHI
佐々木 光敏
Vertreter 吉竹 英俊
有田 貴弘
Titel
(EN) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
(JA) 基板処理装置および基板処理方法
Zusammenfassung
(EN)

PROBLEM TO BE SOLVED: To provide an art to reduce a dissolved concentration of a removal target gas in a process liquid while inhibiting increase in size of a substrate processing apparatus.

SOLUTION: A substrate processing apparatus 100 comprises a plurality of substrate processing parts 20 and a liquid treatment system 30. Each substrate processing part 20 comprises a substrate holding part 21 for holding a substrate W, and a discharge nozzle 23 for discharging a process liquid on the substrate W held by the substrate holding part 21. The liquid treatment system 30 comprises: a storage tank 31 for storing the process liquid therein; a supply pipe part 320 which is connected to the storage tank 31 and forms a supply passage where the process liquid supplied to the discharge nozzle 23 passes through; a return pipe part 322 which is connected to the storage tank 31 and forms a return passage 322P for returning the process liquid passing through the supply pipe part 320 to the storage tank 31; and a gas supply part 60 for supplying a nitrogen gas different from oxygen dissolved in the process liquid to the inside of the return passage 322P of the return pipe part 322.

SELECTED DRAWING: Figure 4

COPYRIGHT: (C)2018,JPO&INPIT

(JA)

【課題】基板処理装置の大型化を抑制しつつ、処理液における除去対象気体の溶存濃度を低下させる技術を提供する。
【解決手段】基板処理装置100は、複数の基板処理部20と液処理システム30を備える。基板処理部20は、基板Wを保持する基板保持部21および基板保持部21に保持された基板Wに処理液を吐出する吐出ノズル23を備える。液処理システム30は、内部に処理液を貯留する貯留槽31と、貯留槽31に接続され、吐出ノズル23に供給される処理液が通過する供給通路を形成する供給配管部320と、貯留槽31に接続されており、供給配管部320を通過した処理液を貯留槽31へ返送する返送通路322Pを形成する返送配管部322と、処理液中に溶存する酸素とは異なる窒素ガスを返送配管部322の返送通路322P内へ供給するガス供給部60とを備える。
【選択図】図4