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1. JP2010129868 - SEMICONDUCTOR MODULE FOR POWER AND METHOD OF MANUFACTURING THE SAME

Amt Japan
Aktenzeichen/Anmeldenummer 2008304545
Anmeldedatum 28.11.2008
Veröffentlichungsnummer 2010129868
Veröffentlichungsdatum 10.06.2010
Erteilungsnummer 4825259
Erteilungsdatum 16.09.2011
Veröffentlichungsart B2
IPC
H01L 25/07
HElektrotechnik
01Grundlegende elektrische Bauteile
LHalbleiterbauelemente; elektrische Festkörperbauelemente, soweit nicht anderweitig vorgesehen
25Baugruppen, die aus einer Mehrzahl von einzelnen Halbleiter- oder anderen Festkörperbauelementen bestehen
03wobei alle Bauelemente von einer Art sind, wie sie in der gleichen Untergruppe einer der Gruppen H01L27/-H01L51/148
04wobei die Bauelemente keine gesonderten Gehäuse besitzen
07wobei die Bauelemente von einer Art sind, wie sie in Gruppe H01L29/87
H01L 23/28
HElektrotechnik
01Grundlegende elektrische Bauteile
LHalbleiterbauelemente; elektrische Festkörperbauelemente, soweit nicht anderweitig vorgesehen
23Einzelheiten von Halbleiter- oder anderen Festkörperbauelementen
28Einkapselungen, z.B. Schutzschichten, Überzüge
H01L 25/18
HElektrotechnik
01Grundlegende elektrische Bauteile
LHalbleiterbauelemente; elektrische Festkörperbauelemente, soweit nicht anderweitig vorgesehen
25Baugruppen, die aus einer Mehrzahl von einzelnen Halbleiter- oder anderen Festkörperbauelementen bestehen
18wobei die Bauelemente aus Arten bestehen, wie sie in verschiedenen Untergruppen ein- und derselben Hauptgruppe H01L27/-H01L51/162
CPC
H01L 23/3735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
H01L 21/565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
565Moulds
H01L 23/3121
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3107the device being completely enclosed
3121a substrate forming part of the encapsulation
H01L 23/4006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
40Mountings or securing means for detachable cooling or heating arrangements
4006with bolts or screws
H01L 23/4334
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
42Fillings or auxiliary members in containers ; or encapsulations; selected or arranged to facilitate heating or cooling
433Auxiliary members ; in containers; characterised by their shape, e.g. pistons
4334Auxiliary members in encapsulations
H01L 23/49811
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
Anmelder MITSUBISHI ELECTRIC CORP
三菱電機株式会社
Erfinder OKA SEIJI
岡 誠次
TAIKAI YOSHIKO
大開 美子
OI TAKESHI
大井 健史
Vertreter 大岩 増雄
児玉 俊英
竹中 岑生
村上 啓吾
Titel
(EN) SEMICONDUCTOR MODULE FOR POWER AND METHOD OF MANUFACTURING THE SAME
(JA) 電力用半導体モジュール及びその製造方法
Zusammenfassung
(EN)

PROBLEM TO BE SOLVED: To miniaturize a semiconductor module for power of a transfer mold resin sealing type, and to improve its reliability.

SOLUTION: The semiconductor module for power includes: a circuit board 4 comprising a metal base plate 1, a high thermal conduction insulation layer 2, and a wiring pattern 3; a semiconductor element 5 for power joined to an element mount section of the wiring pattern; a cylindrical external terminal connection body 7 that is installed in the wiring pattern electrically connected to the semiconductor element for power and to which an external terminal is inserted and connected; a through hole 10 that is formed on the metal base plate and fixes a cooling fin mounted to a surface at the other side of the metal base plate to the metal base plate by a mount member; and a transfer mold resin body 11 sealed to cover one side and a side face of the metal base plate, and the semiconductor element for power while a surface at the other side of the metal base plate and an upper portion of the cylindrical external terminal connection body are exposed, and an insertion hole section 12 of the mount member communicating with the through hole and having a diameter larger than that of the through hole is formed.

COPYRIGHT: (C)2010,JPO&INPIT

(JA)

【課題】トランスファーモールド樹脂封止型の電力用半導体モジュールの小型化、高信頼化を図る。
【解決手段】金属ベース板1と高熱伝導絶縁層2と配線パターン3とから構成される回路基板4と、配線パターンの素子搭載部に接合された電力用半導体素子5と、電力用半導体素子と電気的に接続された配線パターンに設置され、且つ外部端子が挿入接続される筒状外部端子接続体7と、金属ベース板に形成され、金属ベース板の他方側の面に取り付けられる冷却フィンを金属ベース板に取り付け部材で固定するための貫通孔10と、金属ベース板の他方側の面と筒状外部端子接続体の上部とが露出され、貫通孔と連通し貫通孔の直径よりも大きい取り付け部材の挿入孔部12が形成され、且つ金属ベース板の一方側と側面及び電力用半導体素子を覆うように封止されたトランスファーモールド樹脂体11とを備えたものである。
【選択図】図1