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1. (WO2018134024) METHOD OF MANUFACTURING AN INSULATION LAYER ON SILICON CARBIDE

Pub. No.:    WO/2018/134024    International Application No.:    PCT/EP2017/083988
Publication Date: Fri Jul 27 01:59:59 CEST 2018 International Filing Date: Fri Dec 22 00:59:59 CET 2017
IPC: H01L 21/316
H01L 21/04
H01L 29/16
Applicants: ZF FRIEDRICHSHAFEN AG
Inventors: KOMATSU, Yuji
Title: METHOD OF MANUFACTURING AN INSULATION LAYER ON SILICON CARBIDE
Abstract:
A method of manufacturing an insulation layer on silicon carbide is proposed. According to the method first a surface of the silicon carbide is prepared, then a first part of the insulation layer on the surface at a temperature lower than 400° Celsius is formed. Finally, a second part of the insulation layer is formed by depositing a dielectric film on the first part. The surface of the silicon carbide is illuminated by a light at a wavelength below and/or equal to 450nm during and/or after the formation of the first part of the insulation layer.