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1. WO2018077594 - VERFAHREN ZUR MIKROLITHOGRAPHISCHEN HERSTELLUNG MIKROSTRUKTURIERTER BAUELEMENTE

Veröffentlichungsnummer WO/2018/077594
Veröffentlichungsdatum 03.05.2018
Internationales Aktenzeichen PCT/EP2017/075490
Internationales Anmeldedatum 06.10.2017
IPC
G03F 7/20 2006.1
GSektion G Physik
03Fotografie; Kinematografie; vergleichbare Techniken unter Verwendung von nicht optischen Wellen; Elektrografie; Holografie
FFotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen; Materialien dafür; Kopiervorlagen dafür; Vorrichtungen besonders ausgebildet dafür
7Fotomechanische, z.B. fotolithografische Herstellung von strukturierten oder gemusterten Oberflächen, z.B. Druckflächen; Materialien dafür, z.B. mit Fotolacken ; Vorrichtungen besonders ausgebildet dafür
20Belichten; Vorrichtungen dafür
CPC
G03F 7/2022
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
G03F 7/38
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
38Treatment before imagewise removal, e.g. prebaking
G03F 7/70466
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match
G03F 7/7055
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
7055Exposure light control, in all parts of the microlithographic apparatus, e.g. pulse length control, light interruption
G03F 7/70616
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
G03F 7/70666
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70666using aerial image
Anmelder
  • CARL ZEISS SMT GMBH [DE]/[DE] (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, JO, JP, KE, KG, KH, KM, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW)
  • PATRA, Michael [DE]/[DE] (US)
Erfinder
  • PATRA, Michael
Vertreter
  • FRANK, Hartmut
Prioritätsdaten
10 2016 221 261.328.10.2016DE
Veröffentlichungssprache Deutsch (de)
Anmeldesprache Deutsch (DE)
Designierte Staaten
Titel
(DE) VERFAHREN ZUR MIKROLITHOGRAPHISCHEN HERSTELLUNG MIKROSTRUKTURIERTER BAUELEMENTE
(EN) METHOD FOR THE MICROLITHOGRAPHIC PRODUCTION OF MICROSTRUCTURED COMPONENTS
(FR) PROCÉDÉ DE PRODUCTION MICROLITHOGRAPHIQUE DE COMPOSANTS MICROSTRUCTURÉS
Zusammenfassung
(DE) Die vorliegende Erfindung betrifft ein Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente. Ein erfindungsgemäßes Verfahren weist folgende Schritte auf: Bereitstellen eines Wafers, auf den zumindest teilweise ein Photoresist aufgebracht ist, Bereitstellen einer Maske, die abzubildende Strukturen aufweist, Bereitstellen einer Projektionsbelichtungsanlage, welche eine Beleuchtungseinrichtung und ein Projektionsobjektiv aufweist, Belichten des Photoresists durch Projizieren wenigstens eines Teils der Maske auf einen Bereich des Photoresists mit Hilfe der Projektionsbelichtungsanlage, Ermitteln einer Abweichung wenigstens einer Struktureigenschaft der auf dem belichteten Wafer erzeugten Strukturen von einer vorgegebenen Soll-Struktureigenschaft, wobei dieses Ermitteln durch Bestimmen wenigstens einer Eigenschaft eines Lichtfeldes, welches zur Belichtung des auf den Wafer aufgebrachten Photoresists verwendet wird, erfolgt, Nachbehandeln des Wafers auf Basis der ermittelten Abweichung, und chemisches Entwickeln des nachbehandelten Wafers.
(EN) The present invention relates to a method for the microlithographic production of microstructured components. A method according to the invention has the following steps: providing a wafer, to at least some of which a photoresist is applied; providing a mask which has the structures to be reproduced; providing a projection exposure system which has a lighting device and a projection lens; exposing the photoresist by projecting at least some of the mask onto a region of the photoresist using the projection exposure system; establishing a deviation at least of one structural property of the structures produced on the exposed wafer from a predefined target structural property, this establishing step taking place by determining at least one property of a light field used to expose the photoresist applied to the wafer; post-treating the wafer on the basis of the established deviation; and chemically developing the post-treated wafer.
(FR) La présente invention concerne un procédé permettant de produire de manière microlithographique des composants microstructurés. Le procédé selon l'invention comprend les étapes suivantes : disposer d'une tranche sur laquelle est appliqué au moins en partie un photorésist, disposer d'un masque qui présente des structures à reproduire, disposer d'une installation d'éclairage par projection qui comporte un dispositif d'éclairage et un objectif de projection, exposer le photorésist par projection d'au moins une partie du masque sur une zone du photorésist au moyen de l'installation d'éclairage par projection, déterminer un écart d'au moins une propriété structurale des structures produites sur la tranche exposée, par rapport à une propriété structurale de consigne prédéfinie, cette détermination s'effectue par détermination d'au moins une propriété d'un champ lumineux qui est utilisé pour exposer le photorésist appliqué sur la tranche, traitement ultérieur de la tranche sur la base de l'écart déterminé et développement chimique de la tranche ayant subi le traitement ultérieur.
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