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| 1. (WO2015045164) SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
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| IPC: | H01L 21/31 C23C 16/455 C23C 16/50 H05H 1/46 |
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| Applicants: | HITACHI KOKUSAI ELECTRIC INC. 株式会社日立国際電気 |
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| Inventors: | HIROCHI, Yukitomo 廣地 志有 TOYODA, Kazuyuki 豊田 一行 MORIMITSU, Kazuhiro 盛満 和広 SATO, Taketoshi 佐藤 武敏 YAMAMOTO, Tetsuo 山本 哲夫 |
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| Title: | SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| Abstract: |
The present invention is a substrate processing device which alternately supplies a first processing gas and a plasmatized second processing gas to a processing container so as to process a substrate, and is provided with: a first gas supply system which supplies a first processing gas; a second gas supply system which supplies a second processing gas; a plasma unit which is placed upstream of a processing container, and which plasmatizes at least the second processing gas; and a control unit which controls the first gas supply system and the second gas supply system so that the first processing gas and the second processing gas are supplied alternately, and which controls the plasma unit so as to perform application of power necessary for plasmatization of the second processing gas from prior to starting of the supply of the second processing gas.
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