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1. (WO2007052335) SEMICONDUCTOR PRESSURE SENSOR

Pub. No.:    WO/2007/052335    International Application No.:    PCT/JP2005/020072
Publication Date: 10.05.2007 International Filing Date: 01.11.2005
IPC: G01L 9/00
G01L 19/06
H01L 29/84
Applicants: HITACHI, LTD.
株式会社日立製作所
FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.
富士電機デバイステクノロジー株式会社
KAMINAGA, Toshiaki
神永 俊明
HAYASHI, Masahide
林 雅秀
UEYANAGI, Katsumichi
上柳 勝道
SAITO, Kazunori
斉藤 和典
NISHIKAWA, Mutsuo
西川 睦雄
Inventors: KAMINAGA, Toshiaki
神永 俊明
HAYASHI, Masahide
林 雅秀
UEYANAGI, Katsumichi
上柳 勝道
SAITO, Kazunori
斉藤 和典
NISHIKAWA, Mutsuo
西川 睦雄
Title: SEMICONDUCTOR PRESSURE SENSOR
Abstract:
This invention provides a semiconductor pressure sensor which can solve a problem that, when the pressure of a pressure medium containing a corrosive substance such as exhaust gas is measured with a semiconductor pressure sensor, an aluminum electrode, an aluminum wire, and an input/output terminal are attacked by a corrosive gas, thereby improving the corrosion resistance of a sensor chip, and, at the same time, can particularly improve the corrosion resistance of a part as a pressure-sensitive part. The corrosion of an electrode is prevented by providing titanium tungsten layer and a gold layer on an aluminum electrode as a corrosion site. The corrosion of a connection wire by a corrosive substance can be prevented by using a gold wire as the connection wire. The corrosion of an input/output terminal can be prevented by plating the input/output terminal with gold.