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1. WO2006045722 - HALBLEITERBAUELEMENT SOWIE ZUGEHÖRIGES HERSTELLUNGSVERFAHREN

Veröffentlichungsnummer WO/2006/045722
Veröffentlichungsdatum 04.05.2006
Internationales Aktenzeichen PCT/EP2005/055353
Internationales Anmeldedatum 19.10.2005
IPC
H01L 21/336 2006.01
HElektrotechnik
01Grundlegende elektrische Bauteile
LHalbleiterbauelemente; elektrische Festkörperbauelemente, soweit nicht anderweitig vorgesehen
21Verfahren oder Geräte, besonders ausgebildet für die Herstellung oder Behandlung von Halbleiter- oder Festkörperbauelementen oder Teilen davon
02Herstellung oder Behandlung von Halbleiterbauelementen oder Teilen davon
04Bauelemente mit mindestens einer Potenzialsprung-Sperrschicht oder Oberflächensperrschicht, z.B. PN-Übergang, Verarmungsschicht, Anreicherungsschicht
18Bauelemente mit Halbleiterkörpern aus Elementen der Gruppe IV des Periodensystems oder AIIIBV-Verbindungen mit oder ohne Fremdstoffe, z.B. Dotierungsmaterialien
334Mehrstufenprozess zur Herstellung von unipolaren Bauelementen
335Feldeffekt-Transistoren
336mit einem isolierten Gate
H01L 28/78
CPC
H01L 29/665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
665using self aligned silicidation, i.e. salicide
H01L 29/6653
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
6653using the removal of at least part of spacer, e.g. disposable spacer
H01L 29/66545
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66545using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
H01L 29/6656
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
6656using multiple spacer layers, e.g. multiple sidewall spacers
H01L 29/6659
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66568Lateral single gate silicon transistors
66575where the source and drain or source and drain extensions are self-aligned to the sides of the gate
6659with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
H01L 29/7833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7833with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Anmelder
  • INFINEON TECHNOLOGIES AG [DE]/[DE] (AllExceptUS)
  • BARTH, Hans-Joachim [DE]/[DE] (UsOnly)
  • SCHRÜFER, Klaus [DE]/[DE] (UsOnly)
Erfinder
  • BARTH, Hans-Joachim
  • SCHRÜFER, Klaus
Vertreter
  • KARL, Frank
Prioritätsdaten
10 2004 052 388.628.10.2004DE
Veröffentlichungssprache Deutsch (DE)
Anmeldesprache Deutsch (DE)
Designierte Staaten
Titel
(DE) HALBLEITERBAUELEMENT SOWIE ZUGEHÖRIGES HERSTELLUNGSVERFAHREN
(EN) SEMI-CONDUCTOR ELEMENT AND ASSOCIATED PRODUCTION METHOD
(FR) COMPOSANT SEMI-CONDUCTEUR ET SON PROCEDE DE PRODUCTION
Zusammenfassung
(DE)
Die vorliegende Erfindung betrifft ein Halbleiterbauelement sowie ein zugehöriges Herstellungsverfahren, wobei in einem Trägersubstrat (1) voneinander beabstandete Source-/Draingebiete (S, D) zum Festlegen eines Kanalgebiets ausgebildet sind und an der Oberfläche des Kanalgebiets ein Gate-Dielektrikum (2) ausgebildet ist. Ein Gatestapel mit zumindest einer Steuerschicht (3, 3a) befindet sich an der Oberfläche des Gate-Dielektrikums, wobei eine an den Seitenwänden des Gatestapels ausgebildete Spacerstruktur jeweils einen Luftspalt-Spacer (6a) aufweist. Durch einen Abschattungs-Spacer (7), der zumindest den Bodenbereich (BB) des Luft-spalt-Spacers abschattet, können die elektrischen Eigenschaften des Halbleiterbauelements bei verringerten Kosten verbessert werden.
(EN)
The invention relates to a semi-conductor element and an associated production method. Source/drain areas (S,D) are arranged at a distance from each other in a carrier substrate (1) in order to define a channel area and a gate dielectric (2) is formed on the surface of the channel area. A gate stack comprising at least one control layer (3, 3a) is located on the surface of the gate dielectric and a spacer structure which is embodied on the lateral walls of the gate stack comprises an air gap spacer (6a). The electric properties of the semi-conductor element can be improved with reduced costs by means of the shading spacer (7) which shades at least the base area (BB) of the airgap spacer.
(FR)
L'invention concerne un composant semi-conducteur et son procédé de production. Selon l'invention, on réalise dans un substrat support (1) des zones source et drain (S, D) placées à distance l'une de l'autre afin de définir une zone canal et on forme un diélectrique de grille (2) à la surface de la zone canal. Un empilement de grille comprenant au moins une couche de commande (3, 3a) se trouve à la surface du diélectrique de grille, une structure d'espacement réalisée sur les parois latérales de l'empilement de grille présentant respectivement un espaceur à entrefer (6a). Grâce à un espaceur d'occultation (7) qui occulte au moins la base (BB) de l'espaceur à entrefer, il est possible d'améliorer les propriétés électriques du composant semi-conducteur à moindre coût.
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