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1. US20090277376 - Method for producing an epitaxially coated semiconductor wafer

Anmerkung: Text basiert auf automatischer optischer Zeichenerkennung (OCR). Verwenden Sie bitte aus rechtlichen Gründen die PDF-Version.

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Claims

1. A method for producing an epitaxially coated semiconductor wafer with reduced stress, comprising placing a semiconductor wafer polished at least on its front side on a susceptor in a single-wafer epitaxy reactor and coating by applying an epitaxial layer on its polished front side by chemical vapor deposition at temperatures of 1000-1200° C., and, after epitaxial coating has taken place, cooling the semiconductor wafer in the temperature range from 1200° C. to 900° C. at a rate of less than 5° C. per second and, after reaching a temperature of 900° C., is cooled at a rate of 5° C. per second or higher.
2. The method of claim 1, wherein the semiconductor wafer is cooled in a temperature range of 1200-900° C. at a rate of less than or equal to 3° C. per second.
3. The method as claimed in claim 2, wherein the semiconductor wafer is cooled in the temperature range of 1200-1000° C. at a rate of less than or equal to 1.5° C. per second.
4. The method of claim 1, wherein the wafer is supported by a silicon carbide ring separate from the susceptor.
5. The method of claim 1, wherein the wafer is supported on a ring-shaped ledge support in a one-piece susceptor.
6. A method for producing an epitaxially coated semiconductor wafer with reduced stress, comprising placing a semiconductor wafer polished at least on its front side on a susceptor in a single-wafer epitaxy reactor and coating by applying an epitaxial layer on its polished front side by chemical vapor deposition at a deposition temperature of 1000-1200° C., and, after epitaxial coating has taken place, at deposition temperature, raising the semiconductor wafer for 1-60 seconds such that connections between susceptor and wafer that have been produced by deposited semiconductor material are broken up before the wafer is cooled wherein, after epitaxial coating has taken place and after brief raising of the semiconductor wafer, the wafer is cooled in the temperature range from 1200° C. to 900° C. at a rate of less than 5° C. per second.
7. The method as claimed in claim 6, wherein the semiconductor wafer is cooled in a temperature range of 1200-900° C. at a rate of less than or equal to 3° C. per second.
8. The method of claim 7, wherein the semiconductor wafer, after reaching a temperature of 900° C., is cooled at a rate of 5° C. per second or higher.
9. The method as claimed in claim 6, wherein the semiconductor wafer is cooled in the temperature range of 1200-1000° C. at a rate of less than or equal to 1.5° C. per second.
10. The method of claim 9, wherein the semiconductor wafer, after reaching a temperature of 900° C., is cooled at a rate of 5° C. per second or higher.
11. The method of claim 6, wherein the semiconductor wafer, after reaching a temperature of 900° C., is cooled at a rate of 5° C. per second or higher.
12. The method of claim 6, wherein the wafer is supported by a silicon carbide ring separate from the susceptor.
13. The method of claim 6, wherein the wafer is supported on a ring-shaped ledge support in a one-piece susceptor.