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1. SG11201608362T - METHOD AND DEVICE FOR EMBOSSING OF A NANOSTRUCTURE

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Amt
Singapur
Aktenzeichen/Anmeldenummer 11201608362T
Anmeldedatum 22.04.2014
Veröffentlichungsnummer 11201608362T
Veröffentlichungsdatum 29.11.2016
Veröffentlichungsart A1
IPC
G03F 7/00
GSektion G Physik
03Fotografie; Kinematografie; vergleichbare Techniken unter Verwendung von nicht optischen Wellen; Elektrografie; Holografie
FFotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen; Materialien dafür; Kopiervorlagen dafür; Vorrichtungen besonders ausgebildet dafür
7Fotomechanische, z.B. fotolithografische Herstellung von strukturierten oder gemusterten Oberflächen, z.B. Druckflächen; Materialien dafür, z.B. mit Fotolacken ; Vorrichtungen besonders ausgebildet dafür
CPC
G03F 7/0002
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
G03F 7/70783
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70691Handling of masks or wafers
70783Stress or warp of chucks, mask or workpiece, e.g. to compensate for imaging error
G03F 7/70733
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70691Handling of masks or wafers
70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
B41F 19/02
BPERFORMING OPERATIONS; TRANSPORTING
41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
FPRINTING MACHINES OR PRESSES
19Apparatus or machines for carrying out printing operations combined with other operations
02with embossing
Anmelder EV GROUP E. THALLNER GMBH
Erfinder KREINDL, Gerald
Titel
(EN) METHOD AND DEVICE FOR EMBOSSING OF A NANOSTRUCTURE
front page image
Zusammenfassung
(EN) 34 Method and Device for Embossing of a Nanostructure Abstract This invention relates to a method for embossing of a nanostructure (13) from a nanostructure punch (5) into a punch surface (14) of a curable material (8) which has been applied to a substrate (7) with the following steps, especially following sequence: - Alignment of the nanostructure (13) relative to the punch surface (14), - Embossing of the punch surface (14) by A) Prestressing of the nanostructure punch (5) by deformation of the nanostructure punch (5) and/or prestressing of the substrate (7) by deformation of the substrate (7), B) Making contact of a partial area (15) of the punch surface (14) with the nanostructure punch (5) and C) Automatic contacting of the remaining surface (16) at least partially, especially predominantly, by the prestressing of the nanostructure punch (5) and/or the prestressing of the substrate (7). Figure 1 in this regard
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