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1. JP2019511128 - 電気デバイスを備えるアセンブリ

Amt Japan
Aktenzeichen/Anmeldenummer 2018550572
Anmeldedatum 16.05.2017
Veröffentlichungsnummer 2019511128
Veröffentlichungsdatum 18.04.2019
Veröffentlichungsart A
IPC
H01S 5/022
HElektrotechnik
01Grundlegende elektrische Bauteile
SVorrichtungen, die den Prozess der Lichtverstärkung durch stimulierte Emission von Strahlung verwenden, um Licht zu verstärken oder zu erzeugen; Vorrichtungen, die stimulierte Emission von elektromagnetischer Strahlung in anderen als optischen Wellenlängenbereichen verwenden
5Halbleiterlaser
02Bauliche Einzelheiten oder Bauteile, die nicht für die Laseraktion maßgeblich sind
022Montagesockel oder Halterungen; Gehäuse
CPC
H01L 23/49589
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
49589Capacitor integral with or on the leadframe
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48111the wire connector extending above another semiconductor or solid-state body
H01S 5/02216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02208Shape of the housing
02216Butterfly-type, i.e. the housing is generally flat
Anmelder オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング
Erfinder ハルブリッター フーベルト
ウォイチック アンドレアス
Vertreter 特許業務法人鷲田国際特許事務所
Prioritätsdaten 102016208431.3 17.05.2016 DE
Titel
(JA) 電気デバイスを備えるアセンブリ
Zusammenfassung
(JA)

本発明は電気部品を備えるアセンブリに関する。部品は電気部分、制御回路およびキャパシタを有する。少なくとも2つのリードフレームが設けられ、ハウジングへ埋め込まれる。部分、制御回路およびキャパシタはリードフレームに配置され、制御回路は、キャパシタを充電するように、およびキャパシタから部分にクロック方式で電流を供給するように設計される。部品は2つのコンタクトを有し、部品は支持体に配置される。支持体は導電層を有し、2つのコンタクトは層に導電接続される。1つのリードフレームの少なくとも1つの第1の部分が第2のリードフレームより導電層から大きな距離に配置される。