Suche in nationalen und internationalen Patentsammlungen

1. (WO2018086666) JUNCTION TEMPERATURE MEASUREMENT IN A POWER SEMICONDUCTOR MODULE

Pub. No.:    WO/2018/086666    International Application No.:    PCT/DK2017/050366
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Thu Nov 09 00:59:59 CET 2017
IPC: G01K 7/16
Applicants: AALBORG UNIVERSITET
Inventors: BAKER, Nick
Title: JUNCTION TEMPERATURE MEASUREMENT IN A POWER SEMICONDUCTOR MODULE
Abstract:
A method for determining the temperature of a power semiconductor, where the power semiconductor includes an auxiliary emitter terminal and an emitter terminal, and a resistance component arranged between. The resistance component is thermally coupled and/or integrated into the semiconductor die. The resistance component is arranged between the auxiliary emitter terminal and the emitter terminal, and lies in the path of the control current. The resistance component has a temperature dependent resistance characteristic. A measurement circuit is used to inject a sufficient sensing current, or apply a suitable voltage, to the resistance component between the auxiliary emitter and emitter terminals, in order to generate an output signal that is dependent on the temperature dependent resistance of the resistance component. The output signal can be assessed with respect to a predefined temperature characteristic curve, obtained through a calibration procedure. Thus, the temperature of the semiconductor is measured.