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1. (US5656076) Method for growing III-V group compound semiconductor crystal

المكتب : الولايات المتحدة الأمريكية
رقم الطلب: 08451436 تاريخ الطلب: 26.05.1995
رقم النشر: 5656076 تاريخ النشر: 12.08.1997
رقم التسليم: 5656076 تاريخ التسليم: 12.08.1997
نوع النشر: A
التصنيف الدولي للبراءات:
C30B 23/02
C30B 25/02
H01L 21/02
H01L 21/205
H01L 21/335
H01L 21/338
H01L 29/66
H01L 29/778
H01L 29/812
Description not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang ar
المتقدمون: Fujitsu Limited
المخترعون: Kikkawa Toshihide
الوكلاء: Armstrong, Westerman, Hattori, McLeland, & Naughton
بيانات الأولوية: 06116151 30.05.1994 JP
العنوان: (EN) Method for growing III-V group compound semiconductor crystal
الملخص: front page image
(EN)

In a method for growing a III-V group compound semiconductor crystal, as a Si dopant, a compound including a Si atom bonded to an alkyl group and a hydrogen atom is used. Also, a compound including two Si atoms in one molecule thereof, at least one of said Si atoms being bonded to a hydrogen atom, and at least the other of said Si atoms being bonded to an alkyl group can be used. Further, a compound including two Si atoms in one molecule thereof, at least one of said Si atoms being bonded to a hydrogen atom, and at least the other of said Si atoms being bonded to a phenyl group or a compound including a Si atom bonded to an organic amino group can be used. Si can be doped evenly at a high concentration at a low temperature with a safe operation by the invention.


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