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1. (US20160018446) Gate drive under-voltage detection

المكتب : الولايات المتحدة الأمريكية
رقم الطلب: 14331438 تاريخ الطلب: 15.07.2014
رقم النشر: 20160018446 تاريخ النشر: 21.01.2016
رقم التسليم: 09322852 تاريخ التسليم: 26.04.2016
نوع النشر: B2
التصنيف الدولي للبراءات:
H03K 17/00
G01R 19/165
H02M 1/32
H02M 1/08
H02M 7/5387
H02M 3/158
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المتقدمون: FORD GLOBAL TECHNOLOGIES, LLC
المخترعون: Lihua Chen
Dong Cao
Yan Zhou
Craig Rogers
الوكلاء: David B. Kelley
MacMillan, Sobanski & Todd, LLC
بيانات الأولوية:
العنوان: (EN) Gate drive under-voltage detection
الملخص: front page image
(EN)

Gate drive faults are detected for an inverter which comprises a phase switch having an insulated gate, such as an IGBT. A complementary transistor pair is adapted to receive a supply voltage and a pulse-width modulated (PWM) signal to alternately charge and discharge the insulated gate. A comparator compares the voltage at the insulated gate with a reference voltage representing a gate drive fault to generate a first logic signal. A latch samples the first logic signal when the PWM signal has a value corresponding to charging the insulated gate. A logic circuit inhibits charging of the insulated gate when the latched logic signal indicates the gate drive fault. An insulated gate voltage less than the reference voltage is indicative of an under-voltage fault as well as other device failures of the IGBT or the complementary transistors.