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1. (EP0561386) Semiconductor device.

المكتب : المكتب الأوروبي للبراءات (EPO)
رقم الطلب: 93104360 تاريخ الطلب: 17.03.1993
رقم النشر: 0561386 تاريخ النشر: 22.09.1993
نوع النشر: A1
الدول المعينّة: DE,FR,GB
التصنيف الدولي للبراءات:
H 03K
H03K 17/0812
H03K 17/082
H03K 17/16
Description not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang ar
التصنيف التعاوني للبراءات:
H03K 17/0828
H03K 17/08128
H03K 17/0822
H03K 17/168
H03K 17/18
المتقدمون: FUJI ELECTRIC CO LTD
المخترعون: OGAWA SHOGO
MIYASAKA TADASHI
KOBAYASHI SHINICHI
KUWABARA KESANOBU
بيانات الأولوية: 12521492 19.05.1992 JP
6225492 18.03.1992 JP
6596092 24.03.1992 JP
العنوان: (DE) Halbleiteranordnung.
(EN) Semiconductor device.
(FR) Dispositif semi-conducteur.
الملخص: front page image
(EN) A semiconductor device includes an insulated gate semiconductor portion (2) having a gate electrode (2g); an overcurrent limiting portion (12,13) for judging an overcurrent state of the insulated gate semiconductor portion (2) to make it possible to change a gate voltage applied to the gate electrode (2g); and a driving portion (30) for driving the insulated gate semiconductor portion (2). The driving portion (30) includes a driving section (20) for supplying a control voltage to the insulated gate semiconductor device (2) correspondingly to an input signal (I) supplied to the driving portion; and a comparing section (40) for comparing the gate voltage (VG) with a predetermined reference voltage (Vo). The semiconductor device may further include a gate control relaxation section (141) for relaxing a rate of change of the gate voltage (VG) applied to the gate electrode.