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1. (CN106887453) Group III-N nanowire transistors

المكتب : الصين
رقم الطلب: 201710025642.0 تاريخ الطلب: 19.12.2011
رقم النشر: 106887453 تاريخ النشر: 23.06.2017
نوع النشر: A
التصنيف الدولي للبراءات:
H01L 29/06
H01L 29/20
H01L 29/775
H01L 29/778
H01L 29/78
H01L 29/786
H01L 21/335
B82Y 10/00
Description not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang arDescription not available in lang ar
المتقدمون: INTEL CORPORATION
المخترعون: HAN WUI THEN
ROBERT CHAU
BENJAMIN CHU-KUNG
GILBERT DEWEY
JACK KAVALIEROS
MATTHEW V.METZ
NILOY MUKHERJEE
RAVI PILLARISETTY
MARKO RADOSAVLJEVIC
بيانات الأولوية:
العنوان: (EN) Group III-N nanowire transistors
الملخص:
(EN) The invention relates to group III-N nanowire transistors. A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region is electrically coupled with a first end of the channel region, and a drain region is electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.