البحث في مجموعات البراءات الوطنية والدولية

1. (WO2004006312) GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD

Pub. No.:    WO/2004/006312    International Application No.:    PCT/JP2003/008360
Publication Date: Fri Jan 16 00:59:59 CET 2004 International Filing Date: Wed Jul 02 01:59:59 CEST 2003
IPC: C23C 16/01
C23C 16/30
C30B 25/02
H01L 21/205
Applicants: NEC CORPORATION

HITACHI CABLE, LTD.

USUI, Akira

SHIBATA, Masatomo

OSHIMA, Yuichi

Inventors: SHIBATA, Masatomo

OSHIMA, Yuichi

Title: GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD
Abstract:
A group III nitride semiconductor substrate low in defect density and less in warp and its manufacturing method are disclosed. The manufacturing process comprises a sequence of steps of forming a metal Ti film (63) on a sapphire substrate (61), performing nitriding, forming a TiN film (64) having pores, growing an HVPE-GaN layer (66) in which voids (65) are formed by the action of the metal Ti film (63) and the TiN film (64), and separating and removing the sapphire substrate (61) from the portion including the voids (65).